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UF3C120080K3S-VB Product details
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The UF3C120080K3S-VB is a SiC Single N-MOS optimized for high-voltage, high-power switching scenarios. It utilizes SiC-S technology, combining extremely low switching losses with excellent high-temperature reliability. The TO247 package provides excellent heat dissipation paths and creepage distance, suitable for industrial-grade high-voltage systems. The combination of 1200V withstand voltage, 30A current carrying capacity, and 80mΩ on-resistance makes it a cost-effective power switch option for applications like photovoltaic inverters, energy storage converters, and high-voltage power supplies, especially suitable for projects with strict efficiency and reliability requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
VDS=1200V: Covers three-phase grid and 800V bus systems, providing ample voltage margin for spikes, significantly reducing avalanche breakdown risk.
VGS=-10V: Reliable negative voltage turn-off capability, effectively suppresses dv/dt-induced false turn-on, enhancing bridge circuit noise immunity.
Vth=2~4V: Concentrated threshold voltage distribution facilitates parallel current sharing design and is compatible with common SiC drive solutions.
RDS(on)=80mΩ @ VGS=18V: Ultra-low on-resistance, significantly reducing conduction losses under high voltage and high current, decreasing heatsink size.
ID=30A: Ample continuous current capability, combined with 1200V withstand voltage, allows a single device to serve as the main switch for medium to low power levels.
Package TO247: Through-hole package with low thermal resistance and secure mounting, suitable for industrial-grade long-life applications, also beneficial for PCB layout creepage design.
Domain and module applications：
Photovoltaic Inverters: SiC material brings lower switching losses, improving MPPT efficiency and overall power density, reducing levelized cost of energy.
Energy Storage Converters: Directly adapts to high-voltage buses, extremely low reverse recovery losses in bidirectional conversion topologies, improving system cycle efficiency.
Electric Vehicle Charging Stations: High-frequency design reduces the size of magnetic components, lowering the weight and thermal stress of charging modules.
High-Voltage DC-DC Converters: Replaces Si devices in synchronous rectification, significantly improving heavy-load efficiency, supporting higher switching frequencies.
UPS Uninterruptible Power Supplies: 1200V withstand voltage improves system reliability, low on-resistance reduces heat accumulation during continuous operation.
Industrial Motor Drives: Tolerates harsh grid environments, low switching noise, significantly reduced temperature rise in motor controllers.
Induction Heating and High-Voltage Power Supplies: Fast switching characteristics adapt to high-frequency resonant topologies, improving output control precision and overall efficiency.
Selection Summary: The UF3C120080K3S-VB achieves an excellent balance between high-voltage withstand capability, low conduction losses, and system reliability. It is a high-performance general-purpose choice for 1200V class SiC power switches, particularly suitable for industrial-grade applications with clear requirements for efficiency, temperature rise, and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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