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NTHL070N120M3S-VB Product details
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**The NTHL070N120M3S-VB is a Single N-channel Silicon Carbide (SiC) Power MOSFET optimized for high-voltage, high-power switching scenarios. It utilizes advanced SiC-S technology, combining extremely low switching losses with excellent high-temperature reliability. The TO247 package provides excellent heat dissipation capability and creepage distance, suitable for industrial-grade high-current applications. The robust combination of 1200V withstand voltage, 30A current carrying capacity, and 80mΩ on-resistance at 18V drive makes it an ideal power switch selection for high-voltage systems like photovoltaic inverters, on-board chargers, and energy storage converters, significantly improving system efficiency and power density.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- **VDS=1200V**: Covers three-phase grid, 800V bus, and photovoltaic string voltage levels, providing ample voltage margin for spikes, reducing avalanche breakdown risk, and enhancing system robustness.
- **VGS=-10V**: Supports negative voltage turn-off, enhancing dv/dt immunity and effectively suppressing bridge arm crosstalk; recommends +18V forward drive for conduction, fully compatible with mainstream SiC gate drivers.
- **Vth=2~4V**: Reasonable threshold voltage window, balancing noise immunity and fast turn-on, compatible with standard 18V/20V drive levels.
- **RDS(on)=80mΩ @ VGS=18V**: Naturally low resistance characteristic of SiC material, drastically reducing full-load conduction losses, reducing power consumption by approximately 80% compared to equivalent Si-based devices, simplifying thermal design.
- **ID=30A**: Ample continuous current capability, combined with the low thermal resistance TO247 package, stably handles high-voltage, high-current conditions, meeting peak power demands.
- **Package TO247**: Industry standard high-power package, reliable soldering, large thermal capacity, suitable for long-lead PCB or bolt mounting, supports high voltage isolation.
- **Technology SiC-S**: Third-generation SiC process, extremely low gate charge (Qg) and zero reverse recovery charge, switching frequency can exceed 100kHz, significantly reducing the size of magnetic components.
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Domain and module applications：
- **Photovoltaic Inverters**: High-voltage SiC devices reduce DC-AC conversion losses, improve grid-tie efficiency, and help break through the power density limits of string inverters.
- **Energy Storage Converters (PCS)**: Achieve efficient energy conversion in bidirectional DC-DC and DC-AC topologies, with voltage margin ensuring safety on both battery and grid sides.
- **Onboard Chargers (OBC)**: 1200V withstand voltage directly adapts to 800V high-voltage platforms, reducing series voltage balancing circuits, speeding up charging, and reducing vehicle weight.
- **Wind Power Converters**: High current and low loss characteristics improve efficiency across the full power range, enhancing long-term reliability in harsh outdoor environments.
- **Industrial Motor Drives**: SiC's low switching losses support high-frequency PWM, reducing motor iron losses and torque ripple, with significantly improved temperature control.
- **High-Voltage DC-DC Converters**: Replaces silicon-based IGBTs/diodes in synchronous rectification, improving heavy-load efficiency by 2-4%, aiding in the miniaturization of server power supplies and charging stations.
- **Smart Grid and Solid-State Transformers**: Fast switching and high-temperature operation capabilities adapt to high-voltage, high-power energy routing, improving grid dynamic response speed.
**Selection Summary**
The NTHL070N120M3S-VB achieves an ultra-low on-resistance of 80mΩ and a high current capability of 30A on a 1200V high-voltage platform, combined with SiC's extremely fast switching and zero reverse recovery characteristics. It is a superior advanced alternative to traditional silicon-based IGBTs. The TO247 package balances heat dissipation and ease of installation, making it particularly suitable for power electronics projects with extreme requirements for efficiency, power density, and high-temperature reliability, helping engineers quickly implement high-performance solutions while balancing stringent cost and performance targets.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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