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SCT3080KLGC11-VB Product details

Product introduction:

The SCT3080KLGC11-VB is a Single N-MOS optimized for high-voltage, high-power energy conversion scenarios. It utilizes advanced SiC-S technology, combining extremely low switching losses with excellent high-temperature reliability. The TO247 package provides robust support for high-current heat dissipation and system-level assembly. The combination of 1200V withstand voltage, 30A current carrying capacity, and 80mΩ on-resistance makes it an ideal power switch selection for high-end applications such as photovoltaic inverters, charging stations, and on-board power supplies, especially suitable for industrial projects with stringent efficiency and reliability requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 1200V 2~4 30A SiC-S
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SiC-S
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 1200V 2~4 30A 80(mΩ) SiC-S
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 1200V 2~4 30A SiC-S
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N SIC

VDS=1200V: Covers 400V/690V/800V bus systems, providing ample voltage margin to withstand severe voltage spikes and reduce avalanche failure risk.
VGS=-10V: Strong gate negative voltage tolerance, supports negative voltage turn-off strategy, effectively suppresses dv/dt-induced false turn-on, and enhances system immunity.
Vth=2~4V: Reasonable threshold voltage distribution, balancing noise immunity and drive compatibility, works stably with standard SiC drive solutions.
RDS(on)=80mΩ @ VGS=18V: Low on-resistance based on SiC material properties, maintains low conduction losses even at high currents, significantly improving full-load efficiency.
ID=30A: Ample continuous current margin, meeting steady-state and transient power requirements of medium to high-power modules.
Technology=SiC-S: Wide bandgap semiconductor technology, extremely low reverse recovery charge, very fast switching speed, drastically reducing switching losses, supporting higher switching frequencies.
Package TO247: Mature through-hole mounting package, low thermal resistance, short heat dissipation path, easy to mount heatsinks, suitable for system designs with higher power density.

Domain and module applications:



Photovoltaic Inverters: 1200V withstand voltage combined with low conduction losses optimizes three-phase/single-phase topology efficiency, improves MPPT conversion rate, and reduces overall system temperature rise.
Onboard Chargers (OBC): High-frequency switching capability from SiC material effectively reduces the size of magnetic components, aiding in the miniaturization and weight reduction of on-board power supplies.
DC Charging Stations: High withstand voltage and strong overcurrent capability handle wide load ranges, significantly reducing module losses and improving long-term operational reliability.
Energy Storage Converters (PCS): Low switching losses support higher switching frequencies, improving power quality and adapting to the demanding conditions of bidirectional conversion.
Industrial-Grade Switching Power Supplies: High-frequency, high-efficiency characteristics reduce heatsink requirements, suitable for high-density AC-DC solutions like server power supplies and communication power supplies.
Motor Drives and Variable Frequency Drives: 1200V withstand voltage covers three-phase 380V/480V industrial systems. SiC's fast switching reduces inverter losses and improves motor control precision.
High-Voltage DC-DC Converters: Can be used as synchronous rectifiers or main switches, maintaining high efficiency over a wide voltage range, suitable for battery cluster balancing, rail transit, etc.

Selection Summary: The SCT3080KLGC11-VB achieves an excellent balance between high-voltage withstand capability, conduction losses, switching speed, and thermal reliability. It is a high-performance SiC solution of choice for 1200V high-voltage power switch applications, particularly suitable for power electronics projects with strict requirements for efficiency, power density, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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