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UJ3C120070K3S-VB Product details
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The VBsemi UJ3C120070K3S-VB is a Single N-channel Silicon Carbide Field Effect Transistor using SiC-S technology, designed for high-voltage, high-power-density power electronic systems. Its TO247 package provides excellent heat dissipation capability and reliable electrical isolation, suitable for industrial-grade power conversion and high-current switching applications. The device features low conduction losses and fast switching characteristics within a 1200V drain-source voltage range. Combined with a wide threshold voltage range, it effectively reduces drive complexity and improves system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
Drain-Source Voltage (VDS): 1200V
Gate-Source Voltage (VGS): -10V
Threshold Voltage (Vth): 2~4V
On-Resistance (VGS=18V): 80mΩ (typical)
Maximum Drain Current (ID): 30A
Package: TO247
Technology: SiC-S
Domain and module applications：
1. Photovoltaic Inverters: Used in high-voltage DC bus conversion and grid-tied inverter topologies, leveraging low on-resistance and high-temperature tolerance to improve system conversion efficiency and reliability.
2. Electric Vehicle Charging Stations: Serves as the main power switch in AC-DC and DC-DC stages, supporting high-frequency switching, reducing magnetic component size, and increasing charging module power density.
3. Switching Mode Power Supplies (SMPS): Applied in high-efficiency conversion scenarios like server power supplies and telecom power supplies, reducing switching and conduction losses to meet energy efficiency standards.
4. Uninterruptible Power Supplies (UPS): Enables fast and stable switching in high-voltage bus switching and inverter stages, ensuring continuity of power supply to critical loads.
5. Industrial Motor Drives: Used in high-voltage variable frequency drives and servo drive units, withstanding harsh operating conditions, providing smooth power output and overload protection capability.
6. Energy Storage Systems (ESS): Participates in bidirectional DC-DC converters or battery charge/discharge management, enhancing the reliability of high-power energy conversion.
7. High-Voltage Auxiliary Power Supplies: Suitable for auxiliary power supply modules in railway, medical, and new energy equipment, leveraging the wide bandgap advantage of silicon carbide to cope with high-temperature, high-voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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