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MSC080SMA120B-VB Product details

Product introduction:

The MSC080SMA120B-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios. Based on advanced SiC-S technology, it achieves an excellent balance between extremely low on-resistance and superior switching performance at the 1200V voltage rating. The TO247 package offers good heat dissipation capability and creepage distance, suitable for industrial-grade high-reliability applications. The combination of 80mΩ on-resistance, 30A current carrying capacity, and 1200V withstand voltage makes it an ideal choice for high-voltage, high-power applications such as photovoltaic inverters, charging stations, and energy storage systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 1200V 2~4 30A SiC-S
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SiC-S
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 1200V 2~4 30A 80(mΩ) SiC-S
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 1200V 2~4 30A SiC-S
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N SIC

VDS=1200V: Covers system voltage requirements from 600V to 1000V, providing ample voltage margin, significantly enhancing system surge and avalanche reliability.
VGS=-10V: Gate drive withstands negative voltage down to -10V, effectively resisting turn-off transient negative voltage spikes, enhancing drive noise immunity.
Vth=2~4V: The threshold voltage window is reasonably designed, balancing noise immunity and drive compatibility, suitable for standard SiC drive solutions.
RDS(on)=80mΩ @ VGS=18V: Achieves extremely low on-resistance based on SiC-S technology, significantly reducing conduction losses and improving heavy-load efficiency.
ID=30A: Ample continuous current capability, combined with 1200V high withstand voltage, allows a single device to meet medium power level applications, simplifying parallel design.
Package TO247: Traditional through-hole package with low thermal resistance and short heat dissipation path, easy to mount heatsinks, suitable for high-power-density module design.

Domain and module applications:


Photovoltaic Inverters: SiC's low switching and conduction losses significantly improve inverter efficiency, reduce cooling costs, and enhance system power density.
Energy Storage Converters (PCS): 1200V withstand voltage matches 800V bus voltage, reducing the need for multiple series-connected devices, improving system reliability.
Electric Vehicle Charging Station Modules: High-frequency switching capability reduces magnetic component size; 80mΩ low on-resistance lowers full-load temperature rise, extending lifespan.
Industrial Motor Drives: Direct drive from high-voltage DC bus reduces transformer stages, supports higher switching frequencies, improving motor control performance.
Uninterruptible Power Supplies (UPS): High efficiency and high voltage withstand characteristics improve overall conversion efficiency, reduce operational energy consumption, suitable for three-phase high-voltage input.
High-Voltage DC-DC Converters: SiC technology enables fast switching and low losses, suitable for 200~1000V wide input voltage range, improving conversion efficiency.
Power Electronic Transformers and Solid-State Circuit Breakers: Fast turn-off capability and high blocking voltage provide reliable protection, meeting the needs of next-generation grid equipment.

Selection Summary: The MSC080SMA120B-VB achieves an excellent balance between 1200V withstand voltage, 80mΩ low on-resistance, 30A current carrying capacity, and TO247 package. It is a cost-effective, general-purpose choice for high-voltage, high-power switching applications, particularly suitable for projects with strict requirements for efficiency, thermal management, and system reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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