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IMW120R060M1HXKSA1-VB Product details
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The IMW120R060M1HXKSA1-VB is a SiC single N-MOS deeply optimized for high-voltage, high-power switching scenarios. It utilizes SiC-S technology, balancing extremely low switching losses with excellent high-temperature reliability. The TO247 package provides excellent heat dissipation capability and creepage distance, suitable for the structural design of industrial-grade power converters. The combination of 1200V withstand voltage, 30A current carrying capacity, and 80mΩ on-resistance makes it an ideal power switch option for high-voltage, high-density applications such as photovoltaic inverters, energy storage converters, and electric vehicle charging modules, especially for systems with strict requirements for efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
VDS=1200V: Suitable for 400V/800V high-voltage bus systems, a typical voltage rating for SiC devices, effectively handling grid fluctuations and inductive load turn-off spikes, significantly reducing the risk of avalanche breakdown.
VGS=-10V: Supports negative voltage turn-off drive, effectively suppressing dv/dt-induced gate crosstalk in bridge topologies, significantly enhancing system immunity to false triggering during high-frequency switching.
Vth=2~4V: The threshold voltage distribution is reasonable. Combined with negative voltage turn-off, it balances noise immunity and drive compatibility, suitable for standard SiC drive solutions.
RDS(on)=80mΩ @ VGS=18V: Low on-resistance significantly reduces full-load conduction losses, maintaining excellent thermal performance under high-voltage, high-current conditions, allowing for smaller heatsink sizes.
ID=30A: Ample continuous current margin to meet the main switch current requirements in topologies like three-phase full-bridge, half-bridge, and power factor correction.
Package TO247: Features low thermal resistance, high insulation strength, and ease of installation, supporting reliable assembly of high-power modules while adapting to high-temperature operating environments.
Technology SiC-S: Third-generation SiC trench technology reduces gate charge and output capacitance, significantly lowering high-frequency switching losses, helping to increase system switching frequency and power density.
Domain and module applications：
Photovoltaic Inverters: Low switching losses and high voltage withstand capability improve MPPT conversion efficiency, reduce magnetic component size, and lower system cooling costs.
Energy Storage Converters: Stable high-frequency operation in bidirectional energy conversion; low on-resistance reduces battery-side losses, enhancing overall system cycle efficiency.
Electric Vehicle Charging Modules: 1200V withstand voltage combined with SiC's high-frequency capability supports direct rectification from three-phase 380V input, simplifying circuit structure and increasing power density.
UPS Uninterruptible Power Supplies: Achieves efficient AC-DC conversion in high-voltage DC buses, with fast dynamic response and strong overload capability, ensuring reliable power supply to critical loads.
Industrial Motor Drives: Large voltage withstand margin and low switching losses, suitable for 690V class AC motor drives, improving controller temperature rise and motor operation smoothness.
High-Voltage DC-DC Converters: Replaces traditional IGBTs in synchronous rectification or active clamp circuits, significantly reducing switching losses and optimizing efficiency under both light and heavy loads.
Auxiliary Power Supplies and High-Voltage Switches: Wide temperature range and high reliability meet demanding requirements in rail transit, power electronic transformers, etc., suitable for harsh industrial environments.
Selection Summary: The IMW120R060M1HXKSA1-VB achieves an excellent balance between high voltage withstand capability, conduction losses, switching speed, and package reliability. It is a highly competitive SiC MOSFET choice for 1200V high-voltage power conversion scenarios, particularly suitable for projects pursuing high efficiency, high power density, and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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