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IMW120R090M1HXKSA1-VB Product details
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The VBsemi IMW120R090M1HXKSA1-VB is a Single N-channel power field-effect transistor manufactured using advanced SiC-S (Silicon Carbide) technology, designed for high-voltage, high-frequency, high-efficiency power conversion systems. Its TO247 package offers excellent heat dissipation capability and reliable insulation performance, suitable for high-power industrial applications. The device provides stable switching characteristics within a 1200V drain-source voltage range. Combined with low on-resistance and fast switching capability, it significantly reduces conduction losses and switching stress, making it an ideal replacement for traditional silicon-based devices. A gate drive voltage of 18V is recommended to fully leverage its low on-resistance advantage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
Drain-Source Voltage (VDS): 1200V
Gate-Source Voltage (VGS): -10V (negative rating), recommended turn-on drive voltage 18V
Threshold Voltage (Vth): 2~4V
On-Resistance (VGS=18V): 80mΩ (typical)
Maximum Drain Current (ID): 30A
Package: TO247
Technology: SiC-S (Silicon Carbide)
Domain and module applications：
1. Photovoltaic Inverters: Used in the DC-AC conversion of string inverters and central inverters, leveraging high-voltage SiC devices to improve system efficiency and reduce cooling requirements.
2. Electric Vehicle Charging/Discharging Systems: Suitable for On-Board Chargers (OBC) and DC fast charging station power modules, enabling high-power-density bidirectional power conversion.
3. Industrial Motor Drives: Drives high-voltage variable frequency drives, servo drives, and pump/fan motors, supporting high-frequency PWM modulation to reduce current harmonics.
4. Energy Storage Converters (PCS): Used in DC-DC and DC-AC cascade topologies of battery energy storage systems, improving charge/discharge conversion efficiency.
5. High-Voltage DC-DC Converters: Applied in LLC, phase-shifted full-bridge, and other topologies for telecom power supplies, server power supplies, and industrial auxiliary power supplies, reducing rectification losses.
6. Uninterruptible Power Supplies (UPS): Serves as the main switch in the rectifier and inverter stages of three-phase online UPS, enhancing overload capability and reliability.
7. Smart Grids and Power Electronic Transformers: Used in medium-to-high voltage power regulation devices, enabling fast switching and low-loss power flow control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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