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G3R160MT12D-VB Product details
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The VBsemi G3R160MT12D-VB is a Single N-channel Silicon Carbide (SiC) Field Effect Transistor, part of the VBsemi brand high-performance power device series. This product is manufactured using SiC-S technology, featuring extremely low switching losses and excellent high-temperature stability, suitable for efficient, high-power-density power conversion systems. The TO247 package combines excellent heat dissipation performance with reliable electrical insulation, suitable for long-term operation in harsh industrial environments. The device offers a drain-source voltage rating of 1200V and a continuous drain current capability of 30A, significantly improving system efficiency and simplifying thermal design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
Drain-Source Voltage (VDS): 1200V
Gate-Source Voltage (VGS): -10V
Threshold Voltage (Vth): 2~4V
On-Resistance (VGS=18V): 80 mΩ
Maximum Drain Current (ID): 30A
Package: TO247
Technology: SiC-S (Silicon Carbide)
Domain and module applications：
1. Photovoltaic Inverters: The G3R160MT12D-VB can be used in the DC-AC conversion stage of photovoltaic inverters as a high-frequency switching device, achieving efficient power conversion, reducing system losses, and increasing energy yield.
2. Electric Vehicle Charging Stations: In the power modules of DC charging stations, this device is suitable for high-voltage DC-DC converters and PFC circuits, capable of withstanding 1200V high voltage and supporting high current output, ensuring efficient and stable operation of the charging system.
3. Industrial Motor Drives: Suitable for the inverter circuits of high-voltage industrial motor drives, used to control motor start/stop, speed regulation, and energy regeneration. Its low on-resistance and fast switching characteristics help improve the overall efficiency of the motor system.
4. Energy Storage Systems (ESS): Can be used as a switching device in bidirectional DC-DC converters within energy storage converters, supporting efficient energy conversion between high-voltage and low-voltage sides, meeting the requirements of high reliability and low loss in energy storage systems.
5. High-Voltage DC-DC Converters: Suitable for DC-DC conversion modules in high-voltage input scenarios such as rail transit and telecom power supplies. As the main switching device, it significantly reduces switching losses and improves converter power density.
6. Uninterruptible Power Supplies (UPS): In the rectifier and inverter stages of UPS, this device can enhance system overload capability and conversion efficiency, ensuring stable, clean power supply to critical loads.
7. Induction Heating Equipment: Used in the inverter circuits of high-frequency induction heating power supplies, capable of fast switching of high voltage and high current, effectively reducing switching losses, and improving the energy efficiency and reliability of the heating equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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