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IMW120R030M1H-VB Product details
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The IMW120R030M1H-VB is a Single N-MOS deeply optimized for high-voltage, high-power switching scenarios. It utilizes SiC-S technology to achieve an excellent balance between high-frequency switching losses and system reliability. The TO247 package facilitates efficient heat dissipation and compact power module design. The combination of 1200V withstand voltage, 60A current carrying capacity, and 40mΩ on-resistance makes it an ideal choice for high-voltage, high-power applications such as photovoltaic inverters, energy storage converters, electric vehicle charging stations, and industrial power supplies, especially for systems with stringent efficiency and thermal management requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
VDS=1200V: Suitable for 600V~800V bus systems, providing sufficient voltage margin for voltage spikes, significantly enhancing system avalanche and surge immunity.
VGS Rating Range: Supports standard gate drive voltages, enabling fast switching with SiC characteristics to reduce switching losses.
Vth=2~4V: The threshold voltage is reasonably designed, balancing noise immunity and drive compatibility, suitable for common SiC drivers.
RDS(on)=40mΩ @ VGS=18V: Ultra-low on-resistance significantly reduces full-load conduction losses, effectively minimizing heatsink size.
ID=60A: Ample continuous current capability to cover steady-state and transient peak demands of medium to high-power converters.
Package TO247: Large creepage distance and low thermal resistance, suitable for high-voltage, high-current scenarios, supporting terminal crimping or screw mounting for high reliability.
Technology SiC-S: Wide bandgap material provides extremely low reverse recovery charge and temperature-stable on-resistance, allowing for significantly increased switching frequency.
Domain and module applications：
Photovoltaic Inverters: SiC's low switching losses help achieve over 99% efficiency, reduce passive component size, and increase power density.
Energy Storage Converters (PCS): High voltage withstand margin combined with low on-resistance, suitable for bidirectional conversion topologies, reducing energy conversion losses.
Electric Vehicle Charging Stations: Suitable for three-phase Vienna rectifiers and LLC stages, high-frequency design shrinks magnetic components and improves thermal performance.
Industrial Switching Power Supplies: Reduces losses in both hard-switching and soft-switching topologies, improving full-load reliability and lifespan.
Uninterruptible Power Supplies (UPS): Ultra-low losses enhance overall system efficiency; 1200V withstand voltage improves tolerance to grid fluctuations and lightning surges.
High-Voltage DC-DC Converters (HVDC): SiC devices are naturally suited for high bus voltage scenarios, with excellent reverse recovery characteristics, reducing oscillation and EMI.
Motor Drives/Variable Frequency Drives: High-voltage bus direct drive simplifies the system; wide Safe Operating Area (SOA) accommodates overload conditions, enhancing drive system robustness.
Auxiliary Power Supplies/Pre-charge Circuits: High surge capability and thermal stability, suitable for pre-charge, discharge, and auxiliary switches in high-voltage electrical systems.
Selection Summary: The IMW120R030M1H-VB combines low on-resistance, high current capability, and SiC high-frequency advantages at the 1200V voltage rating, making it a high-performance preferred solution for high-voltage, high-power switching applications, particularly suitable for projects with clear requirements for efficiency, power density, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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