中文
English
VBP112MC60-4L Product details
Back to previous pageProduct introduction：
The VBsemi VBP112MC60-4L is a Single N-channel Silicon Carbide Field Effect Transistor using SiC-S technology, designed for high-voltage, high-frequency, high-efficiency power conversion scenarios. Its TO247-4L package features a Kelvin source structure, effectively reducing drive loop parasitic inductance, improving switching speed and reliability. The device offers a 1200V drain-source withstand voltage and 60A continuous drain current capability, with a typical on-resistance of only 40mΩ (@VGS=18V), significantly reducing conduction losses, suitable for demanding industrial-grade power systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
Drain-Source Voltage (VDS): 1200V
Gate-Source Voltage (VGS): -10V
Threshold Voltage (Vth): 2~4V
On-Resistance (VGS=18V): 40mΩ (typical)
Maximum Drain Current (ID): 60A
Package: TO247-4L
Technology: SiC-S
Domain and module applications：
1. Photovoltaic Inverters: Used in DC-DC boost and inverter bridge arms, leveraging low on-resistance and high-speed switching characteristics to improve conversion efficiency and reduce cooling requirements.
2. On-Board Chargers (OBC): Suitable for high-voltage battery systems, serving as the main switching device for PFC and DC-DC stages, enabling high power density and bidirectional charging/discharging control.
3. Industrial Power Supplies: Applied in high-power AC-DC topologies for server power supplies, telecom power supplies, etc., reducing switching losses and improving overall system efficiency.
4. Energy Storage Systems: Undertakes power conversion and grid-connection control in Power Conversion Systems (PCS), offering high voltage withstand margin to enhance system reliability.
5. Motor Drives: Suitable for high-voltage variable frequency drives, servo drives, and traction inverters, supporting high-speed PWM modulation to improve dynamic response.
6. Power Grid and Energy Management: Used in solid-state transformers, reactive power compensation, and high-voltage DC distribution equipment within smart grids, meeting high-voltage isolation and fast protection requirements.
7. High-Temperature Operating Environment Applications: Leveraging the wide bandgap advantage of SiC material, it maintains stable operation under harsh conditions like high temperature and strong radiation, suitable for aerospace and oil & gas field equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
