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VBP112MC60 Product details
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**You are designing a high-voltage, high-power system, such as a photovoltaic inverter or an electric vehicle charging station, requiring 1200V withstand voltage and 60A high current, while also desiring low switching losses and reduced thermal stress. Ordinary silicon-based MOS transistors struggle under high temperature and high voltage. The VBsemi VBP112MC60 utilizes advanced SiC-S Silicon Carbide technology, integrating 1200V blocking voltage, 60A continuous current, and an on-resistance of only 40mΩ into a TO247 package, making high-voltage power conversion both efficient and reliable.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Voltage Rating 1200V, easily handles high-voltage bus and surge impacts
- Gate Drive Voltage VGS minimum -10V, compatible with common drive circuits
- Threshold Voltage 2~4V, clear and stable switching characteristics
- On-Resistance 40mΩ (at 18V drive), significantly lower conduction losses compared to similarly rated silicon devices
- Maximum Current 60A, comfortably handles high-power scenarios
- Package TO247, strong heat dissipation capability, easy for mounting and parallel expansion
- Technology SiC-S, Silicon Carbide material brings lower switching losses and higher junction temperature margin
**
Domain and module applications：
- Photovoltaic Inverters – Acts as a DC-AC power switch, improving conversion efficiency and reducing heatsink size.
- Energy Storage Systems (ESS) – Enables efficient energy conversion in bidirectional DC-DC converters, reducing power loss.
- Electric Vehicle Charging Stations – Withstands high voltage and current stress, increasing power density of charging modules.
- Industrial Motor Drives – High-frequency switching characteristics reduce noise and losses, supporting more precise motor control.
- High-Voltage Switching Power Supplies – Used in active PFC and LLC topologies, replacing silicon MOS/IGBT to increase operating frequency.
- UPS Uninterruptible Power Supplies – Reliably handles bus voltage fluctuations, ensuring power quality for critical loads.
- Wind Power Converters – Adapts to harsh environmental temperatures, enhancing long-term system reliability.
**One-sentence summary: The VBP112MC60 is not just an ordinary power transistor; it is the 'Silicon Carbide Heart' and 'Loss Terminator' for your high-voltage, high-efficiency design.**
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
