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MSC040SMA120B4-VB Product details
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The VBsemi MSC040SMA120B4-VB is a Single N-channel Silicon Carbide (SiC) power field-effect transistor, part of the VBsemi high-performance SiC MOSFET series. This product is manufactured using advanced SiC-S process technology, featuring a drain-source voltage (VDS) of 1200V and stable operation within a gate-source voltage (VGS) range of -10V to 18V. Housed in a TO247-4L package, it is suitable for high-power, high-switching-frequency applications, significantly reducing switching losses and improving system efficiency, making it an ideal choice for high-voltage power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- Drain-Source Voltage (VDS): 1200V
- Gate-Source Voltage (VGS): -10V ~ 18V
- Threshold Voltage (Vth): 2~4V
- On-Resistance (VGS=18V): 40mΩ
- Maximum Drain Current (ID): 60A
- Technology Type: SiC-S
- Package Type: TO247-4L
Domain and module applications：
1. High-Voltage DC-DC Converters: Suitable for photovoltaic inverters, energy storage systems, and high-voltage DC bus conversion modules, leveraging SiC's high breakdown voltage and low conduction losses for efficient power conversion.
2. Electric Vehicle Charging Stations: In on-board chargers (OBC) and DC fast chargers' power factor correction (PFC) and secondary rectification circuits, this device significantly improves switching frequency and system power density.
3. Industrial Motor Drives: Suitable for high-voltage industrial drives, servo drives, and pump motor control modules, where low on-resistance and fast switching capabilities help reduce temperature rise and improve reliability.
4. Uninterruptible Power Supplies (UPS): In the rectifier and inverter stages of high-voltage UPS systems, the MSC040SMA120B4-VB can handle high-frequency switching, ensuring high efficiency and stable output.
5. High-Voltage Battery Management Systems: This device can be used in the charge/discharge control circuits of energy storage battery packs for reliable high-voltage switching and protection.
6. Renewable Energy Generation Systems: Used in power switch units for solar inverters and wind power converters, meeting the requirements of high voltage, high current, and harsh environments.
7. High-Frequency Induction Heating Equipment: In resonant conversion circuits of induction heating power supplies, leveraging the low losses and high-speed switching of SiC MOSFETs to improve operating frequency and heating efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
