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IV1Q12050T4-VB Product details
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Troubled by low efficiency and high thermal stress in high-voltage, high-power conversion? Let the VBsemi IV1Q12050T4-VB solve your problems! This SiC N-MOS transistor in a TO247-4L package, using advanced SiC-S technology, features a high breakdown voltage of 1200V yet boasts an ultra-low on-resistance of only 40mΩ, capable of continuously handling 60A of current. Both switching and conduction losses are significantly reduced. The SiC material provides extremely low gate charge and excellent thermal stability, making high-voltage converters more efficient and reliable – a "high-voltage weapon" for power engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
Breakdown Voltage: 1200V (handles high-voltage applications with ease, ample margin)
Drive Range: -10V (compatible with common SiC drive solutions)
Turn-on Threshold: 2~4V (standard drive level, good compatibility)
Ultra-Low On-Resistance: 40mΩ @ 18V (small variation at high temperature, extremely low conduction losses)
High Current Capability: 60A (handles high-power output effortlessly)
Package: TO247-4L (four-pin package, Kelvin source design, lower drive losses)
Technology: SiC-S (silicon carbide process, high frequency, high efficiency, high-temperature tolerance)
Domain and module applications：
– Seven Hot Scenarios, One Device Handles All
Photovoltaic Inverters: Improves MPPT efficiency, aids system miniaturization, higher energy yield
Energy Storage Power Conversion Systems (PCS): Bidirectional high-efficiency conversion, reduces thermal losses, extends system life
Electric Vehicle Charging Stations: Stable high-voltage, high-current output, faster and safer charging
UPS Uninterruptible Power Supplies: Fast response, ensures continuous and reliable power for critical loads
Industrial Motor Drives: Smooth high-voltage drive, strong overload capability, adapts to harsh conditions
High-Frequency DC-DC Converters: Leverages SiC advantages, high switching frequency, small magnetic component size
High-Voltage Battery Charge/Discharge Equipment: Precise current and voltage control, low energy conversion losses
IV1Q12050T4-VB – High voltage, high efficiency, protected by SiC, empowering your power design to break through limits with ease!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
