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AS1M040120T-VB Product details
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The AS1M040120T-VB is a Single N-MOS deeply optimized for high-voltage, high-power switching scenarios. Based on SiC-S silicon carbide technology, it combines extremely low switching losses with high-temperature reliability. The TO247-4L package, featuring a Kelvin source pin, effectively reduces parasitic inductance in the gate drive loop, enhancing dynamic performance at high frequencies. The combination of 1200V breakdown voltage, 60A current capability, and 40mΩ on-resistance (at VGS=18V) makes it an ideal choice for high-efficiency power systems like photovoltaic inverters, energy storage converters, and electric vehicle charging stations, especially for projects with strict requirements for power density and thermal management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
VDS=1200V: Covers high-voltage DC bus scenarios, providing ample voltage margin to withstand grid surges and inductive load spikes, reducing breakdown risk.
VGS=-10V: Supports a maximum negative gate voltage of -10V. Combined with the recommended +18V drive voltage, it enables fast and reliable turn-on and turn-off, enhancing noise immunity.
Vth=2~4V: The threshold voltage window is reasonable, balancing noise margin and drive compatibility, suitable for standard SiC gate drive circuits.
RDS(on)=40mΩ @ VGS=18V: Ultra-low on-resistance significantly reduces full-load conduction losses, decreasing heatsink size and system temperature rise.
ID=60A: High continuous current capability meets the current margin requirements of high-power density modules.
Package TO247-4L: The four-pin Kelvin source structure eliminates the influence of source parasitic inductance, further reducing switching losses, while the metal substrate facilitates efficient heat dissipation.
Domain and module applications：
Photovoltaic Inverters: 1200V breakdown voltage combined with low on-resistance improves MPPT and inverter stage efficiency, aiding power density upgrade in PV systems.
Energy Storage Converters: In bidirectional DC-DC and buck-boost circuits, SiC's low switching losses and fast recovery characteristics significantly improve overall conversion efficiency.
Electric Vehicle Charging Stations: High-frequency switching capability effectively reduces magnetic component size; 60A high current supports high-power fast charging module design.
Industrial Motor Drives: Advantages of high voltage and low loss replace traditional IGBTs, simplifying snubber circuits and improving drive reliability and efficiency.
High-Frequency DC-DC Power Supplies: The Kelvin source package combined with SiC switching speed is suitable for high-frequency, high-power applications like servo drives and data center power supplies.
High-Power Switched-Mode Power Supplies: Applicable in both hard-switching and soft-switching topologies; high-temperature operating capability reduces cooling requirements and extends system life.
Selection Summary: Leveraging the wide bandgap advantages of SiC material, the AS1M040120T-VB demonstrates excellent conduction and switching performance in high-voltage, high-frequency, and high-temperature applications. The TO247-4L package achieves an ideal balance between drive precision and thermal management, making it a preferred device for 1200V class high-power switching systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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