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TW030Z120C-VB Product details
Back to previous pageProduct introduction：
The VBsemi TW030Z120C-VB is a Single N-type Silicon Carbide (SiC) power field-effect transistor, part of the VBsemi high-performance SiC MOSFET series. This product is manufactured using advanced SiC-S process technology, featuring a drain-source voltage (VDS) capability of 1200V and operating at a gate-source voltage (VGS) of -10V. Housed in a TO247-4L package, it offers low on-resistance, high breakdown voltage, and excellent thermal stability, making it suitable for high-voltage, high-power, high-efficiency power electronic conversion systems, particularly excelling in high-frequency switching and high-temperature operating environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- Drain-Source Voltage (VDS): 1200V
- Gate-Source Voltage (VGS): -10V
- Threshold Voltage (Vth): 2~4V
- On-Resistance (VGS=18V): 40mΩ
- Maximum Drain Current (ID): 60A
- Technology: SiC-S
- Package: TO247-4L
Domain and module applications：
1. Photovoltaic Inverters: The TW030Z120C-VB is suitable for boost and inverter circuits in grid-tied photovoltaic inverters, utilizing its high voltage, low on-resistance, and fast switching characteristics to improve system conversion efficiency and reduce power losses.
2. New Energy Vehicle Charging Stations and On-Board Chargers (OBC): This device can be used in the PFC stage and DC-DC stage of charging station power modules and on-board chargers, meeting the switching requirements of high voltage and high current, enhancing charging power density and reliability.
3. Energy Storage Power Conversion Systems (PCS): In energy storage systems, this model can serve as the switching transistor in bidirectional converters, enabling efficient charge/discharge control and adapting to high-voltage bus designs for enhanced system stability.
4. High-Voltage DC-DC Converters: Suitable for high-voltage DC-DC converters in data center power supplies, industrial power supplies, and communication base station power supplies, leveraging the low switching loss advantage of SiC material to improve conversion efficiency and frequency.
5. Uninterruptible Power Supplies (UPS): The TW030Z120C-VB can be used in the rectifier and inverter stages of high-power UPS systems, ensuring stable and efficient power conversion during mains switching and load transients.
6. Industrial Motor Drives and Servo Control: Its high voltage and high current capability make it suitable for motor control modules such as industrial drives and servo drives, enabling precise speed and torque control while improving system voltage margin.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
