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NVH4L040N120SC1-VB Product details
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The NVH4L040N120SC1-VB is a Single N-MOS deeply optimized for high-voltage, high-power switching scenarios. Using SiC-S technology (silicon carbide process), it combines extremely low switching losses with excellent high-temperature reliability. The TO247-4L package, featuring a Kelvin source design, effectively reduces parasitic inductance in the drive loop, aiding high-frequency, high-efficiency system design. The combination of 1200V breakdown voltage, 60A current capability, and 40mΩ on-resistance makes it an ideal core power device for high-voltage, high-power applications such as electric vehicles, photovoltaic inverters, and energy storage converters, especially suitable for projects with strict requirements for efficiency and power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
VDS=1200V: Covers 400V/800V/1000V DC bus systems, provides ample margin for voltage spikes, significantly enhancing system avalanche and surge withstand capability.
VGS=-10V: Ample negative turn-off margin effectively suppresses crosstalk-induced false turn-on in bridge circuits, enhances dv/dt immunity, and improves system reliability.
Vth=2~4V: Moderate gate threshold voltage, compatible with standard SiC drive solutions, ensuring fast and stable turn-on and turn-off.
RDS(on)=40mΩ @ VGS=18V: Ultra-low on-resistance significantly reduces full-load conduction losses, resulting in lower temperature rise at high current densities, simplifying thermal design.
ID=60A: Ample continuous current capability, capable of handling peak power demands in scenarios like electric vehicle traction inverters and high-power charging modules.
Package TO247-4L: Four-pin Kelvin source structure separates power and drive loops, significantly reducing the impact of source inductance on switching speed, supporting higher switching frequencies while maintaining good thermal and current handling capabilities.
Domain and module applications：
Electric Vehicle Traction Inverters: SiC material enables low switching losses and high switching frequency, improving motor controller efficiency and extending driving range.
Photovoltaic Inverters: 1200V breakdown voltage combined with low on-resistance simplifies MPPT boost and H4 bridge topology design, improving power generation efficiency.
Energy Storage Power Conversion Systems (PCS): Bidirectional operation capability and high reliability, suitable for grid-tied/off-grid switching, reducing thermal losses, and improving energy throughput.
High-Power DC-DC Converters: Kelvin source package supports high-frequency synchronous rectification, reducing magnetic component size and increasing power density.
Charging Stations and On-Board Chargers: High-voltage, high-efficiency conversion significantly reduces heat dissipation during charging, supports higher power output, and shortens charging time.
Industrial Motor Drives and UPS: Large voltage margin and good temperature stability, suitable for harsh industrial environments, improving system continuous operation reliability.
High-Frequency Power Conversion Modules: Low parasitic parameters and fast SiC switching characteristics facilitate high-frequency operation in LLC/CLLC topologies, enabling module miniaturization.
Selection Summary: The NVH4L040N120SC1-VB achieves an excellent balance between high voltage withstand capability, low losses, high-temperature stability, and packaging convenience. It is a high-performance SiC switching solution for 1200V class high-voltage, high-power applications, particularly suitable for projects with stringent requirements for efficiency, power density, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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