中文
English
SCTWA60N120G2-4-VB Product details
Back to previous pageProduct introduction：
Troubled by high switching losses and difficult heat dissipation in high-voltage, high-power applications? Let the VBsemi SCTWA60N120G2-4-VB solve your problems! This SiC N-MOS transistor in a TO247-4L package, based on third-generation silicon carbide technology, offers a 1200V breakdown voltage and a 60A high current capability, with an ultra-low on-resistance of 40mΩ. It exhibits excellent high-temperature and high-frequency characteristics, significantly reducing switching and conduction losses. The SiC-S process provides extremely low reverse recovery charge and fast switching capability, making it the "power core" for high-efficiency scenarios like industrial power supplies, photovoltaic inverters, and energy storage systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
Breakdown Voltage: 1200V (covers high-voltage systems with ample margin)
Drive Range: -10V (supports typical 0~18V gate drive)
Turn-on Threshold: 2~4V (compatible with standard SiC drive solutions)
Ultra-Low On-Resistance: 40mΩ @ 18V (lower losses even at high temperatures)
High Current Capability: 60A (handles high-power output with ease)
Package: TO247-4L (Kelvin source design for cleaner drive loop)
Domain and module applications：
– Seven Hot Scenarios, One Device Handles All
Photovoltaic Inverters: MPPT boost and H-bridge inverter, significant efficiency improvement
Energy Storage Converters: Bidirectional DC-DC and grid-tie control, stable and reliable
New Energy Vehicles: On-board OBC and DC-DC conversion, aiding lightweight design
Industrial Motor Drives: High-frequency speed control, low noise, low temperature rise
High-Frequency Power Modules: LLC full-bridge, phase-shifted full-bridge, high power density
Charging Stations: High-power rectification and conversion, strong surge withstand capability
High-End Server Power Supplies: Titanium efficiency, tangible energy savings
SCTWA60N120G2-4-VB – With SiC power, high-voltage high-power design is more manageable!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
