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IMZ120R030M1HXKSA1-VB Product details
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The VBsemi IMZ120R030M1HXKSA1-VB is a Single N-channel Silicon Carbide field-effect transistor, part of the VBsemi brand SiC power device series. This product is manufactured using advanced SiC-S technology, featuring ultra-high voltage withstand capability, extremely low on-resistance, and excellent high-temperature stability. It is suitable for high-efficiency, high-power-density power conversion systems. Encased in a TO247-4L package, it is ideal for industrial-grade high-power module designs, providing reliable switching performance and long-term stability under harsh operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
Drain-Source Voltage (VDS): 1200V
Gate-Source Voltage (VGS): -10V
Threshold Voltage (Vth): 2~4V
On-Resistance (VGS=18V): 40mΩ
Maximum Drain Current (ID): 60A
Technology: SiC-S
Package: TO247-4L
Domain and module applications：
1. Photovoltaic Inverters: The IMZ120R030M1HXKSA1-VB is suitable for power switch units in high-voltage photovoltaic inverters, significantly improving system conversion efficiency and reducing switching losses. Applicable for central or string inverters.
2. Electric Vehicle Charging Stations: In DC fast charging stations, this device can serve as a high-voltage switch in AC-DC or DC-DC converters, supporting high-power transmission, ensuring efficient, stable, and safe charging processes.
3. Industrial Power Supplies and UPS: Suitable for industrial high-frequency switching power supplies, Uninterruptible Power Supplies (UPS), and high-voltage DC power supply systems, effectively reducing transformer and heatsink size, improving power density.
4. Motor Drive Systems: In high-voltage motor drives and inverter applications, the IMZ120R030M1HXKSA1-VB can be used in three-phase inverter bridge circuits for high-speed, high-efficiency motor control, particularly suitable for high-performance industrial motors and commercial air conditioner compressors.
5. High-Voltage DC-DC Converters: Suitable for applications such as electric vehicle on-board chargers, smart grids, and rail transit high-voltage DC-DC converters, utilizing its low on-resistance and fast switching characteristics for efficient power conversion.
6. Wind Power Converters: In the rectification and inversion stages of wind power converters, this SiC MOSFET can enhance system voltage withstand levels and switching frequencies, reduce losses, and improve equipment adaptability in harsh environments.
7. Energy Storage Systems (ESS): In the PCS (Power Conversion System) of battery energy storage systems, this device can be used for high-voltage side power conversion, supporting bidirectional energy flow, improving the overall efficiency and reliability of the energy storage system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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