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NTH4L040N120SC1-VB Product details
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The NTH4L040N120SC1-VB is a Single-N Silicon Carbide power MOSFET optimized for high-voltage, high-power switching applications. Utilizing SiC-S technology, it achieves an ultra-low on-resistance of 40mΩ at a 1200V voltage withstand rating, while also balancing high-frequency switching capability and high-temperature reliability. The TO247-4L package incorporates a Kelvin source structure, effectively reducing parasitic inductance in the gate drive loop, enhancing switching speed and dv/dt immunity. It is particularly suitable for high-efficiency, high-density power conversion applications such as photovoltaic inverters, energy storage converters, and electric vehicle charging stations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
VDS=1200V: Directly covers 800V bus systems with ample voltage margin, suitable for three-phase industrial grids and 1500V photovoltaic systems.
VGS=-10V/Recommended Drive 18V: Supports negative voltage turn-off, significantly enhancing Miller effect immunity; 18V forward drive fully reduces conduction losses, adapting to typical SiC drive schemes.
Vth=2~4V: Reasonable threshold voltage window, balancing noise immunity and low-temperature turn-on capability, simplifying drive circuit design.
RDS(on)=40mΩ @ VGS=18V: Ultra-low on-resistance, significantly reduces conduction losses, improves full-load efficiency, reduces heatsink cost.
ID=60A: Strong continuous current capability, confidently handles high-load scenarios like high-power motors and power modules.
Package TO247-4L: Four-pin Kelvin source package, reduces gate loop parasitic inductance, supports higher switching frequencies, improves EMI characteristics, and facilitates PCB layout and thermal design.
Technology SiC-S: Silicon Carbide material offers advantages of wide bandgap, high critical field strength, and low thermal resistance, resulting in higher operating junction temperature, lower switching losses, and significantly improved system reliability compared to traditional silicon devices.
Domain and module applications：
Photovoltaic Inverters: High voltage withstand margin combined with low conduction losses improves MPPT efficiency and overall power density, reducing the number of paralleled devices.
Energy Storage Converters (PCS): Achieves ultra-low losses in bidirectional DC-AC conversion, supports higher switching frequencies, reducing magnetic component size.
Electric Vehicle DC Fast Chargers: 1200V voltage withstand adapts to 800V high-voltage platforms, 60A current capability meets stringent demands of high-power charging modules.
Industrial Motor Drives: Extremely low switching losses under high-frequency PWM control, smoother motor operation, significantly reduced inverter temperature rise.
High-Voltage DC-DC Converters: Excellent reverse recovery characteristics of the SiC body diode reduce rectification losses, improving heavy-load efficiency by 2-5%.
UPS Uninterruptible Power Supplies: High-reliability SiC technology adapts to grid fluctuations, wide safe operating area ensures stable operation under sudden load surges.
Wind Power Converters: High voltage withstand and high-temperature operating capability match harsh environments, reducing system redundancy, improving lifecycle economic benefits.
Selection Summary: The NTH4L040N120SC1-VB achieves a perfect balance of ultra-low on-resistance and high-frequency switching performance on a 1200V high-voltage platform. The TO247-4L package fully unleashes the potential of the SiC device, making it the preferred solution for high-power, high-efficiency, high-reliability applications, especially suitable for power electronics projects with extreme requirements for loss, temperature rise, and system size.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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