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APT80SM120B-VB Product details
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**Are you designing an efficient, high-power-density industrial power system while having to meet the stringent requirements of 1200V high voltage, 60A high current, and low losses? Traditional silicon-based MOSFETs suffer from sharply increasing switching losses at high voltages, making thermal management a challenge. The VBsemi APT80SM120B-VB utilizes Silicon Carbide (SiC) technology, integrating 1200V voltage withstand capability, 60A current carrying capacity, and an ultra-low on-resistance of only 40mΩ (@18V drive) into a TO247 package, making high-voltage, high-power conversion more efficient and reliable, eliminating thermal management headaches.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Voltage Withstand: 1200V, SiC material, confidently handles high-voltage bus fluctuations
- Gate Drive Range: -10V, Recommended Drive Voltage: 18V, compatible with standard SiC drivers
- Threshold Voltage: 2~4V, clear switching characteristics, strong anti-interference capability
- On-Resistance: 40mΩ (@18V drive), maintains extremely low conduction losses even at high voltages
- Maximum Current: 60A, large TO247 package handles high-power applications
- Technology: SiC-S (Silicon Carbide), extremely low reverse recovery charge, fast switching speed, excellent high-temperature performance
**
Domain and module applications：
Photovoltaic Inverters – As the main switch in boost or inverter stages, significantly reduces switching losses, improves system efficiency, and reduces heatsink size.
Electric Vehicle Charging Stations – In high-voltage DC-DC and AC-DC modules, leverages high voltage withstand and low conduction loss advantages to increase charging power density.
Industrial Motor Drives – Utilizes fast switching characteristics of SiC to reduce electromagnetic interference, improving inverter operating efficiency and reliability.
High-Frequency Switching Power Supplies – Replaces silicon-based IGBTs/MOSFETs in LLC or full-bridge topologies, increasing switching frequency, reducing transformer and filter component size.
Energy Storage Converters (PCS) – Supports bidirectional energy conversion, high-voltage and high-current capability meets battery stack grid connection requirements.
Uninterruptible Power Supplies (UPS) – Provides efficient and stable power conversion paths in mains-to-battery switching circuits, ensuring critical load power supply.
Wind Power Converters – Adapts to high-temperature, high-voltage conditions in harsh environments, improving overall equipment lifespan and power density.
**One-sentence summary: The APT80SM120B-VB is not just an ordinary MOS tube; it is the 'Silicon Carbide Core Engine' and 'Thermal Management Tool' for your high-voltage, high-power system moving towards high efficiency and miniaturization.**
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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