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SICW040N120H-BP-VB Product details
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VBsemi SICW040N120H-BP-VB is a Single N-channel Silicon Carbide power field-effect transistor manufactured using SiC-S technology, designed for high-voltage, high-power conversion and high-reliability industrial applications. Its TO247 package offers excellent heat dissipation characteristics and power density, making it suitable for medium to high-power power electronic systems. The device provides stable switching performance within a 1200V drain-source voltage range, combining extremely low on-resistance with high voltage withstand capability, significantly reducing system losses and improving overall efficiency. The wide bandgap characteristics of the silicon carbide material support higher operating temperatures and faster switching speeds, meeting stringent industrial application requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Drain-Source Voltage (VDS): 1200V
- Gate-Source Voltage (VGS): -10V
- Threshold Voltage (Vth): 2~4V
- On-Resistance (VGS=18V): 40mΩ (Typical)
- Maximum Drain Current (ID): 60A
- Package: TO247
- Technology: SiC-S (Silicon Carbide)
Domain and module applications：
1. Photovoltaic Inverters: Used in high-voltage DC-AC conversion stages, leveraging low on-resistance and high voltage characteristics to improve inverter efficiency and reduce power loss.
2. Electric Vehicle Charging Stations: Serves as the main power switch, supporting high-voltage bus input and high-frequency operation, enhancing the power density and reliability of charging modules.
3. Industrial Power Supplies and UPS: Applied in PFC or DC-DC stages of high-power switching power supplies and uninterruptible power supplies, enhancing system overload capacity.
4. Energy Storage Systems: Used for battery charge/discharge management and high-voltage side on/off control, enabling fast switching and low-loss energy transmission.
5. High-Voltage Motor Drives: Drives industrial inverters, compressors, and pump loads, adapting to wide voltage ranges and high-temperature operating environments.
6. Wind Power Converters: Performs high-voltage rectification or inversion functions in wind power grid-connected converters, improving overall system efficiency and stability.
7. High-Frequency Power Modules: Suitable for topologies like LLC resonant converters and phase-shifted full bridges, utilizing the high-speed switching characteristics of SiC devices to reduce magnetic component size.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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