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MSC040SMA120B-VB Product details
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:**VBsemi MSC040SMA120B-VB is a Single N-channel Silicon Carbide (SiC) Power MOSFET, belonging to the VBsemi high-performance power device series. This product is manufactured based on advanced SiC-S technology, featuring ultra-high voltage withstand capability, extremely low conduction losses, and excellent thermal stability, suitable for high-frequency, high-efficiency, high power density power electronics applications. It uses a TO247 package for easy installation and heat dissipation, meeting stringent industrial and automotive-grade application requirements.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Drain-Source Voltage (VDS): 1200V
- Gate-Source Voltage (VGS): -10V (Recommended operating range, refer to datasheet for details)
- Threshold Voltage (Vth): 2~4V
- On-Resistance (VGS=18V): 40mΩ
- Maximum Drain Current (ID): 60A
- Package Type: TO247
- Technology Type: SiC-S (Silicon Carbide Planar/Trench Process)
**
Domain and module applications：
1. **Photovoltaic Inverters**: MSC040SMA120B-VB can be used in the boost and inverter stages of photovoltaic inverters. Leveraging the 1200V withstand voltage and low on-resistance, it significantly improves system conversion efficiency and reduces power losses.
2. **Electric Vehicle Charging Stations**: In DC fast charging stations and On-Board Chargers (OBC), this device serves as an efficient switching transistor, suitable for high-voltage, high-current Power Factor Correction (PFC) and DC-DC conversion circuits, improving charging system reliability.
3. **Industrial Motor Drives**: Suitable for high-voltage motor drive modules, such as industrial VFDs and servo drives, for controlling motor start/stop, speed regulation, and energy feedback, meeting high power density design requirements.
4. **Energy Storage Systems (ESS)**: In Energy Storage Converters (PCS) and battery charge/discharge management modules, it can be used as a high-voltage switching element for efficient energy conversion and safe, reliable power control.
5. **High-Voltage DC-DC Converters**: Suitable for high-voltage bus conversion scenarios like data center power supplies and telecom power supplies, serving as a synchronous rectification or main switch device to improve power supply efficiency and power density.
6. **Uninterruptible Power Supplies (UPS)**: In online UPS systems, it can be used in rectification and inverter stages to provide stable power output, enhancing the system's ability to handle grid fluctuations and load surges.
7. **Rail Transit and Electric Traction**: This device is suitable for high-voltage, high-power applications such as railway auxiliary converters and traction converters. The high-temperature characteristics and low switching losses brought by its SiC material can significantly improve overall system performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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