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AIMW120R045M1XKSA1-VB Product details
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AIMW120R045M1XKSA1-VB is a SiC Single N-MOS deeply optimized for high-voltage, high-power switching applications, using SiC-S trench technology, combining extremely low switching losses with excellent high-temperature reliability. The TO247 package provides excellent heat dissipation capability and creepage distance, suitable for high-current, high-voltage applications. The combination of 1200V withstand voltage, 60A current carrying capability, and 40mΩ on-resistance (@VGS=18V) makes it a preferred power device for high-voltage systems such as photovoltaic inverters, energy storage converters, charging stations, and industrial power supplies, significantly improving system efficiency and power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
VDS=1200V: Covers three-phase 380VAC rectification, boost, and high-voltage DC bus scenarios, providing ample voltage spike margin, reducing breakdown failure risk.
VGS=-10V (Maximum Rating): Compatible with common +18V positive drive and -5V~-10V negative voltage turn-off schemes, effectively suppressing crosstalk and false turn-on.
Vth=2~4V: Reasonable threshold voltage window, strong anti-interference capability, while supporting direct drive by standard SiC drivers.
RDS(on)=40mΩ @ VGS=18V: Ultra-low on-resistance, significantly reduces full-load conduction losses, improves power conversion efficiency, simplifies heat dissipation design.
ID=60A: Ample continuous current margin, meeting peak load demands of high-power motors, inverters, and high-power DC-DC converters.
Technology SiC-S: SiC material combined with trench design, extremely fast switching speed, near-zero reverse recovery charge, significantly reduces switching losses and EMI in bridge circuits.
Package TO247: Suitable for bolt fixing or press-fit mounting, low thermal resistance, short heat dissipation path, supports long-term high-power operation.
Domain and module applications：
Photovoltaic Inverters: SiC's low switching losses allow the topology to operate at higher frequencies, significantly reducing magnetic component size, improving MPPT efficiency.
Energy Storage Converters (PCS): 1200V withstand voltage combined with low resistance achieves efficient power conversion in bidirectional buck-boost circuits, reducing heat dissipation costs.
Electric Vehicle Charging Stations: Meets high-voltage battery pack charging requirements, high-frequency switching characteristics reduce overall temperature rise, facilitating module miniaturization.
Industrial Motor Drives: Extremely low switching losses support high-frequency PWM, smoother motor operation, significantly improved drive reliability.
High-Voltage DC-DC Converters: Used in LLC or phase-shifted full-bridge topologies, high efficiency, low oscillation, effectively improving light-load and full-load comprehensive performance.
Uninterruptible Power Supplies (UPS): High voltage withstand and high current margin ensure safety and stability during sudden loads and grid anomalies, extending system life.
Active Filters and SVG: The high-speed switching capability of SiC-S technology allows precise harmonic compensation, improving grid power quality.
Selection Summary: AIMW120R045M1XKSA1-VB achieves an excellent balance between voltage rating, on-resistance, switching speed, and package heat dissipation capability. It is a cost-effective SiC solution for 1200V high-voltage, high-power applications, particularly suitable for projects with stringent requirements on efficiency, power density, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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