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TW030N120C-VB Product details
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VBsemi TW030N120C-VB is a Single N-channel Power Field Effect Transistor using Silicon Carbide (SiC-S) technology, specifically designed for high-voltage, high-frequency, high-efficiency power conversion scenarios. Its TO247 package offers excellent heat dissipation capability and high reliability, suitable for high-power industrial-grade applications. The device supports a drain-source voltage of 1200V and a continuous drain current of 60A, with an on-resistance as low as 40mΩ (VGS=18V), significantly reducing conduction losses; simultaneously, the SiC material characteristics bring extremely low switching losses and excellent thermal stability, helping the system achieve higher power density and simplified heat dissipation design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
Drain-Source Voltage (VDS): 1200V
Gate-Source Voltage (VGS): -10V
Threshold Voltage (Vth): 2~4V
On-Resistance (VGS=18V): 40mΩ (Typical)
Maximum Drain Current (ID): 60A
Package Type: TO247
Process Technology: SiC-S (Silicon Carbide)
Domain and module applications：
1. Photovoltaic Inverters: Used for high-voltage DC-AC conversion, leveraging low on-resistance and fast switching capability to improve grid-tied efficiency and reduce system size.
2. Electric Vehicle Charging Stations: As a high-voltage power switch, supporting high current charging and discharging, improving charging power and reliability.
3. Energy Storage Converters: Applied in bidirectional DC-DC circuits of battery energy storage systems for efficient energy conversion and regenerative feedback.
4. Industrial Motor Drives: Suitable for high-voltage VFD drives, SiC devices can reduce switching losses and improve motor control performance.
5. UPS Uninterruptible Power Supplies: Provides efficient power conversion during mains/battery switching and inverter stages, ensuring power supply to critical loads.
6. High-Voltage DC Power Supplies: Used in high-voltage power supply modules for communication, medical, or research equipment, achieving stable and efficient power conversion.
7. Grid-Level Power Electronic Equipment: Such as SVG, active filters, etc., providing fast response capability to improve power quality.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
