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S2M0025120D-VB Product details
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S2M0025120D-VB is a Single N-MOS deeply optimized for high-voltage, high-power switching applications. It uses advanced SiC-S Silicon Carbide technology, combining extremely low switching losses with excellent high-temperature reliability. The TO247 package achieves a good balance between high power density and heat dissipation capability. The powerful combination of 1200V withstand voltage, 60A continuous current carrying capability, and 40mΩ on-resistance makes it a preferred power device for photovoltaic inverters, electric vehicle drives, and industrial power supplies, especially suitable for applications with stringent efficiency and robustness requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
VDS=1200V: Suitable for 380V/690V AC systems and 800V DC buses, providing ample voltage margin to handle bus spikes and avalanche shocks.
VGS=-10V: Supports negative gate voltage turn-off, enhancing dv/dt immunity, preventing false turn-on under high-voltage, high-frequency conditions, improving system safety margin.
Vth=2~4V: Wide and stable threshold voltage range, matching SiC gate drive characteristics, strong noise immunity, simplifying drive circuit design.
RDS(on)=40mΩ @ VGS=18V: Achieves extremely low on-resistance at the 1200V voltage rating, significantly reducing full-load conduction losses, contributing to overall system efficiency improvement.
ID=60A: Ample continuous current capacity, meeting the continuous load demands of high-power motors, converters, and grid-connected equipment.
Package TO247: Through-hole mounting provides short heat dissipation path and low thermal resistance, suitable for high-power module layout, easy to attach heatsinks, supporting high-reliability industrial-grade applications.
Technology SiC-S: Silicon Carbide material features wide bandgap, high breakdown field strength, and low reverse recovery characteristics, enabling faster switching speeds and much better high-temperature stability than silicon-based devices.
Domain and module applications：
Photovoltaic Inverters: SiC low switching losses improve MPPT efficiency, reduce heatsink volume, meeting high-voltage, high-power grid connection requirements.
Electric Vehicle Drives: 1200V withstand voltage covers 800V high-voltage platforms, low resistance reduces drive losses, extends range, enhances electric control system reliability.
Charging Station Modules: High-frequency switching characteristics help reduce magnetic component size, increase power density, controllable temperature rise under fast charging/discharging scenarios.
Energy Storage Converters: In bidirectional DC-DC and DC-AC conversion, low on-resistance and low switching losses bring higher bidirectional conversion efficiency.
Industrial High-Frequency Switching Power Supplies: TO247 package facilitates high-power heat dissipation, SiC technology adapts to high-frequency hard-switching topologies, significantly reducing energy losses.
High-Voltage DC-DC Converters: Using this device in synchronous rectification and active clamp circuits can replace multiple parallel transistors, simplifying design and cost.
Power Electronics Research and Special Power Supplies: Wide safe operating area and high voltage withstand capability are suitable for demanding applications like high-power pulse power supplies and induction heating.
Selection Summary: S2M0025120D-VB achieves an excellent balance between ultra-high withstand voltage, low on-resistance, high current capability, and SiC high-frequency characteristics. It is a cost-effective professional choice for 1200V high-voltage power conversion applications, particularly suitable for projects with strict requirements on efficiency, power density, and high-temperature reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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