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S2M0040120D-VB Product details
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S2M0040120D-VB is a SiC-based Single N-channel Power MOSFET launched by VBsemi, using SiC-S technology, combining extremely low switching losses with excellent high-temperature reliability. The TO247 package provides strong heat dissipation capability and very low thermal resistance, suitable for high power density designs. The combination of 1200V withstand voltage, 60A continuous current, and 40mΩ on-resistance (@VGS=18V) allows it to directly replace traditional silicon-based IGBTs or super-junction MOSFETs, suitable for high-voltage, high-power applications such as photovoltaic inverters, charging stations, and on-board electric drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
VDS=1200V: Suitable for 400V~1000V high-voltage systems, ample voltage margin covers bus voltage spikes, improving system robustness.
VGS=-10V: Supports negative voltage turn-off, effectively suppresses false turn-on caused by dv/dt during high-voltage, high-frequency switching, improving gate drive anti-interference capability.
Vth=2~4V: Moderate threshold voltage, balancing noise immunity and drive compatibility, stable operation even in strong electromagnetic environments.
RDS(on)=40mΩ @ VGS=18V: Ultra-low on-resistance, significantly reduces conduction losses, especially beneficial for high current continuous output.
ID=60A: Strong continuous current capability, meeting rated and peak load requirements of high-power converters.
Package TO247: Through-hole mounting, low thermal resistance, large creepage distance, easy heatsink assembly, suitable for high-power modules and independent heat dissipation designs.
Domain and module applications：
Photovoltaic Inverters: SiC low switching losses improve inverter efficiency, 1200V withstand voltage simplifies two-level/three-level topology design, increasing power density.
Electric Vehicle On-Board Chargers (OBC): High-frequency operation reduces magnetic component size, high voltage withstand adapts to 800V battery architecture, reducing system losses.
DC Charging Stations: 60A class high current transmission capability, 40mΩ low on-resistance reduces heat generation, more reliable for long-term full-load operation.
Energy Storage Converters (PCS): Achieves high efficiency in bidirectional energy conversion, TO247 package facilitates modular parallel connection for current expansion.
High-Voltage DC-DC Converters: Low reverse recovery charge and fast switching characteristics reduce oscillation losses, suitable for hard-switching and resonant topologies.
Industrial Motor Drives: Replaces IGBTs to increase switching frequency, reduce torque ripple, simplify heat dissipation design, and improve overload capability.
Selection Summary: S2M0040120D-VB provides 60A continuous current and 40mΩ on-resistance at 1200V high voltage. Leveraging the inherent advantages of SiC material, it perfectly combines high frequency, high voltage, and high efficiency. It is the preferred power switch for the next generation of high-power power electronic systems, particularly suitable for applications with strict requirements on losses, size, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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