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NSF040120L4A0Q-VB Product details
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**Are you designing a high-power industrial power supply or photovoltaic inverter, facing a 1200V high-voltage bus, but struggling to balance the switching losses and conduction losses of silicon-based MOSFETs? The NSF040120L4A0Q-VB is designed for this – based on advanced SiC (Silicon Carbide) technology, it integrates a high voltage rating of 1200V, a current capability of 60A, and an ultra-low on-resistance of 40mΩ in a TO247-4L package, enabling high-voltage, high-efficiency conversion without compromise.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- Voltage Rating 1200V, easily handles high-voltage buses and surge impacts
- Gate Drive Voltage -10V (recommended for drive design reference), threshold voltage 2~4V, flexible drive design
- On-Resistance 40mΩ (at 18V drive), significantly reduces conduction losses
- Maximum Current 60A, ample for high-power scenarios
- Utilizes SiC-S process, ultra-low switching losses, supports high-frequency operation
- TO247-4L package, optimizes thermal path and drive loop parasitic parameters
**
Domain and module applications：
- Photovoltaic Inverters / Energy Storage Converters – Used as the main switch in boost or inverter stages, significantly improving system efficiency and power density.
- New Energy Vehicle Charging Stations – Meets high-voltage fast charging demands, reduces temperature rise, improves reliability and charging efficiency.
- Industrial Motor Drives / Servo Systems – Leverages SiC's fast switching characteristics to reduce tail current, improve EMI and speed control performance.
- High-Frequency DC-DC Converters – Replaces silicon devices in LLC or phase-shifted full-bridge topologies, increases switching frequency, reduces magnetic component size.
- Uninterruptible Power Supplies (UPS) – Withstands severe load transients in high-voltage bus conversion, ensuring power supply continuity for critical loads.
- Wind Power Converters – Adapts to harsh grid environments, reduces power losses, increases annual energy production.
In a nutshell: The NSF040120L4A0Q-VB is not an ordinary MOSFET; it is your "Silicon Carbide Blade" for breaking through efficiency and temperature rise bottlenecks in high-voltage, high-power designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
