中文
English
S2M0040120D-1-VB Product details
Back to previous pageProduct introduction：
Still struggling with switching losses and thermal dissipation challenges in high-voltage, high-power conversion? The VBsemi S2M0040120D-1-VB is here to break the deadlock! This TO247-packaged SiC N-MOSFET, based on advanced SiC-S technology, features a high voltage rating of 1200V, an ultra-low on-resistance of only 40mΩ, can handle a high current of 60A, offers fast switching speed, and excellent high-temperature stability. It enables high-voltage systems like photovoltaic inverters, charging stations, and industrial power supplies to easily achieve high efficiency and low loss operation, making it a "performance weapon" for power electronics engineers.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
Voltage Rating: 1200V (SiC device, ample voltage margin)
Drive Range: -10V (compatible with standard gate drive solutions)
Turn-On Threshold: 2~4V (reasonable threshold window, strong anti-interference)
Ultra-Low On-Resistance: 40mΩ @ 18V (extremely low conduction losses, significantly reduced heat generation)
High Current Capability: 60A (single device can handle high power density designs)
Package: TO247 (excellent thermal performance, suitable for high-power assembly)
Technology: SiC-S (Silicon Carbide process, extremely low switching losses and high-temperature stability)
Domain and module applications：
– Six High-Voltage Scenarios, One Device Covers All
Photovoltaic Inverters: Efficient MPPT and DC-AC conversion, boosting system efficiency
Charging Stations: High-power DC-DC and AC-DC modules, reducing overall system temperature rise
Energy Storage Converters: Bidirectional energy conversion, fast response, lower losses
Industrial Power Supplies: High-frequency switching power supplies and UPS, doubling reliability and lifespan
Motor Drives: High-voltage servo drives and inverters, smooth speed control, strong impact resistance
Electric Vehicles: On-board OBC and traction drive controllers, robust operation over wide temperature range
S2M0040120D-1-VB – Empowered by Silicon Carbide, confidently handles high voltage and high current, making your power system more efficient and reliable!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
