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SCT3030KLHRC11-VB Product details
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**The SCT3030KLHRC11-VB is a SiC Single N-MOSFET deeply optimized for high-voltage, high-power switching applications. It utilizes SiC-S technology, combining extremely low switching losses with high temperature stability. The TO247 package achieves an ideal balance between heat dissipation capability and safety creepage distance. The combination of 1200V voltage rating, 60A current capability, and 40mΩ on-resistance (@VGS=18V) makes it an efficient upgrade over traditional silicon-based super-junction MOSFETs or IGBTs, particularly suitable for high-reliability applications such as photovoltaic inverters, energy storage converters, and new energy vehicle charging.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- **VDS=1200V**: Suitable for 400V/600V/800V systems, provides ample voltage margin for spikes, significantly reduces avalanche breakdown risk.
- **VGS=-10V**: Supports negative gate drive turn-off, enhances dv/dt immunity, improves switching consistency in multi-device parallel configurations.
- **Vth=2~4V**: Moderate threshold voltage, strong anti-interference capability, compatible with mainstream SiC gate drive solutions.
- **RDS(on)=40mΩ @ VGS=18V**: Ultra-low on-resistance, significantly reduces full-load temperature rise, simplifies thermal design and improves system efficiency.
- **ID=60A**: Ample continuous current margin, meets peak demands of medium-to-high power converters and motor drives.
- **Package TO247**: Excellent thermal performance, large drain creepage distance, meets high-voltage safety requirements, facilitates multi-device paralleling for power level expansion.
**
Domain and module applications：
- **Photovoltaic Inverters**: SiC material provides extremely low switching losses and reverse recovery charge, improving MPPT efficiency and reducing overall system temperature rise.
- **Energy Storage Converters (PCS)**: High-frequency operation significantly reduces magnetic component size, improving system power density and bidirectional conversion efficiency.
- **New Energy Vehicle Charging Stations**: 1200V voltage rating covers 800V battery platforms, reduces the number of series-connected devices, improves charging module reliability.
- **Industrial Motor Drives**: Lower switching losses and higher operating junction temperature support higher PWM frequencies, improving motor control accuracy and reducing heatsink size.
- **Data Center Power Supplies**: Application in three-phase PFC and LLC topologies can improve efficiency by 1~2%, helping meet 80Plus Titanium standards.
- **High-Power DC-DC Converters**: Replaces IGBT+FRD solutions, simplifies synchronous rectification/active clamp circuits, reduces switching ringing and electromagnetic interference.
**Selection Summary**: The SCT3030KLHRC11-VB, with its robust 1200V/60A electrical parameters, low losses and high thermal stability from SiC-S technology, and excellent suitability of the TO247 package for high-voltage, high-power scenarios, is a cost-effective choice for efficient power electronics conversion, particularly suitable for projects with strict requirements on efficiency, reliability, and high power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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