中文
English
SCT3030KLGC11-VB Product details
Back to previous pageProduct introduction：
**The SCT3030KLGC11-VB is a Single N-channel SiC MOSFET deeply optimized for high-voltage, high-power switching applications. It utilizes advanced SiC-S technology, combining extremely low switching losses with excellent high-temperature reliability. The TO247 package provides excellent thermal paths and creepage distances for high-voltage systems. The combination of 1200V voltage rating, 60A current capability, and 40mΩ on-resistance makes it an ideal upgrade over traditional silicon-based IGBTs in applications such as photovoltaic inverters, energy storage converters, and industrial drives, especially suitable for designs requiring high power density and demanding thermal environments.**
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- **VDS=1200V**: Suitable for 600V~800V bus voltage systems, provides ample voltage margin for spikes, significantly reduces avalanche breakdown risk, enhances system robustness.
- **VGS=-10V (Rated)**: Supports standard gate drive voltage designs, enabling fast and reliable switching with SiC gate drive solutions.
- **Vth=2~4V**: Reasonable threshold voltage window, strong immunity to false turn-on, compatible with output levels of common gate drive ICs.
- **RDS(on)=40mΩ @ VGS=18V**: Extremely low on-resistance, significantly reduces conduction losses, substantially lowers full-load temperature rise, simplifying thermal design.
- **ID=60A**: Ample continuous current margin, capable of handling transient high-current surges like motor starting and grid surges.
- **Package TO247**: Large pin creepage distance suitable for high-voltage applications, metal backplate for direct heat dissipation, low thermal resistance, supports high power density layout.
**
Domain and module applications：
- **Photovoltaic Inverters**: SiC material provides extremely low reverse recovery charge and switching losses, improves MPPT efficiency, reduces heatsink volume, enabling power density upgrades for string inverters.
- **Energy Storage Converters (PCS)**: High voltage and low on-resistance reduce energy losses in bidirectional DC-DC and DC-AC stages, improving system round-trip efficiency.
- **Electric Vehicle On-Board Chargers (OBC)**: 1200V voltage rating covers 800V high-voltage platforms, reduces the number of series-connected devices, improves charging reliability.
- **Industrial Motor Drives**: High switching frequency reduces current harmonics, resulting in smoother motor operation and significantly lower controller temperature rise, supports higher bus voltages.
- **High-Frequency DC-DC Converters**: Fast switching characteristics of SiC-S technology significantly reduce switching losses, enabling higher operating frequencies, facilitating magnetic component miniaturization.
- **Uninterruptible Power Supplies (UPS)**: Achieves high-efficiency AC-DC conversion in high-voltage buses, low on-resistance reduces full-load losses, improves overall efficiency and power density.
- **High-Voltage Battery Formation and Testing Equipment**: Precise linear region characteristics and high voltage withstand capability meet the stringent requirements of high-precision charge/discharge control for power devices.
**Selection Summary**: The SCT3030KLGC11-VB achieves an extremely low on-resistance of 40mΩ and a high current capability of 60A at the 1200V voltage rating. Combined with the inherent high-temperature, low-loss advantages of SiC material, it is a high-performance general-purpose choice for high-voltage power conversion applications, particularly suitable for projects with strict requirements on efficiency, heat dissipation, and system volume.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
