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UF3C120040K3S-VB Product details
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Are you designing a 30kW photovoltaic inverter with a DC bus voltage approaching 1000V, while needing to maintain high efficiency under high temperature and high frequency? Standard silicon-based MOSFETs lack sufficient voltage withstand and have high switching losses, while IGBTs struggle to break through frequency bottlenecks. The VBsemi UF3C120040K3S-VB utilizes third-generation SiC-S technology, packaging a 1200V voltage rating, 60A current capability, and an on-resistance of only 40mΩ into the high-power TO247 package – allowing high-voltage systems to avoid cumbersome paralleling and complex thermal management, simultaneously achieving power density and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Voltage Rating 1200V, easily covers 800V and even 1000V bus systems
- Gate drive supports -10V negative voltage turn-off, stronger dv/dt crosstalk immunity
- Threshold voltage 2~4V, clear and stable turn-on and turn-off characteristics
- On-Resistance 40mΩ (at 18V drive), losses far lower than traditional devices of similar specifications
- Maximum Current 60A, single device can handle high-power energy transfer
Domain and module applications：
- Photovoltaic Inverters / MPPT Boost Circuits – Used as high-frequency boost switch, significantly reduces conduction and switching losses, improves grid-tied efficiency.
- Energy Storage Converters (PCS) – Leverages SiC's high-speed, low-loss advantages in bidirectional DC-DC topologies, reduces heat generation and extends system life.
- On-Board Chargers / Charging Station Modules – Withstands high-voltage battery impact, supports higher switching frequencies, effectively reduces magnetic component size.
- Industrial Motor Drives / Induction Heating Power Supplies – Remains reliable under high-temperature, high-voltage environments, improves equipment continuous operation capability and power density.
- EV/HEV On-Board Power Conversion – Utilizes SiC's high-temperature tolerance, simplifies cooling system, improves vehicle range.
- High-Voltage DC-DC Converters / Active PFC – Perfectly replaces traditional IGBT + diode combinations, elevating system efficiency to a new level.
In a nutshell: The UF3C120040K3S-VB is not an ordinary MOSFET; it is the "Efficiency Engine" and "Heat Dissipation Nemesis" for your high-voltage, high-power designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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