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IMW120R045M1XKSA1-VB Product details
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The IMW120R045M1XKSA1-VB is a Single N-channel SiC power MOSFET deeply optimized for high-voltage, high-power switching applications. It utilizes advanced SiC-S technology, combining extremely low switching losses, excellent thermal stability, and high reliability. The TO247 package provides good thermal paths and creepage distances, suitable for industrial-grade high-power density designs. The combination of 1200V voltage rating, 60A current capability, and 40mΩ on-resistance makes it an ideal power switch choice for high-voltage applications such as photovoltaic inverters, energy storage converters, on-board chargers, and industrial power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
VDS=1200V: Suitable for 400V~800V high-voltage bus systems, ample voltage margin effectively handles switching spikes and surge impacts, reduces avalanche breakdown risk.
VGS=-10V: Clear drive swing range, compatible with mainstream SiC driver chip negative voltage turn-off schemes, enhances dv/dt interference immunity, prevents false turn-on.
Vth=2~4V: Reasonable threshold voltage window, balancing noise immunity and high-temperature stability, facilitates reliable gate drive circuit design.
RDS(on)=40mΩ @ VGS=18V: Extremely low on-resistance, significantly reduces conduction losses, lower temperature rise under full load conditions, simplifies thermal system design.
ID=60A: Strong continuous current capability, supports high power output of high-power converters, ample margin covers peak demands of most industrial high-voltage loads.
Package TO247: High power density, low thermal resistance, supports screw mounting, facilitates insulation and thermal solution design, suitable for long-term high-reliability operation.
Technology SiC-S: Silicon Carbide material provides extremely low gate charge and reverse recovery charge, switching speed significantly superior to Si devices, enabling high-frequency operation and miniaturization.
Domain and module applications：
Photovoltaic Inverters: Low SiC switching losses improve MPPT efficiency, 1200V voltage rating supports 1500V systems, reduces number of series-connected modules, lowers system cost.
Energy Storage Converters (PCS): High-frequency operation advantage in bidirectional conversion improves charge/discharge efficiency, reduces magnetic component size, accelerates system response.
Electric Vehicle On-Board Chargers (OBC) and DC-DC: High voltage withstand and low losses directly improve overall efficiency, support high-power fast charging, alleviate thermal management pressure.
Industrial Drives and UPS: High-reliability package and wide safe operating area adapt to harsh grid environments, reduce failure rates, ensure uninterrupted power for critical loads.
High-Frequency High-Voltage Power Supplies: Extremely low Qg and Qrr enable switching frequencies up to 100kHz+, significantly reducing transformer and filter size, leading power density.
Charging Stations and New Energy Power Generation: 60A high current capability matches high-power charging modules, simplifies parallel current sharing design, increases system power level.
Selection Summary: The IMW120R045M1XKSA1-VB achieves an excellent balance between high voltage withstand, low on-resistance, and fast switching capability. It is a high cost-performance SiC power switch choice for 1200V class applications, particularly suitable for industrial and automotive-grade projects with strict requirements on efficiency, power density, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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