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IMW120R040M1HXKSA1-VB Product details
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Are you designing a high-power photovoltaic inverter or an electric vehicle on-board charger, facing a 1200V high-voltage bus, needing to withstand 60A high current surges, while wanting to minimize switching losses? Traditional silicon-based MOS transistors have reached their limits. The VBsemi IMW120R040M1HXKSA1-VB utilizes next-generation SiC-S silicon carbide technology, integrating 1200V withstand voltage, an ultra-low 40mΩ on-resistance, and 60A current capability into a TO247 package, allowing high-voltage power converters to find the perfect balance between efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Withstand Voltage: 1200V, providing ample safety margin for high-voltage systems
- Gate Drive: Supports -10V negative voltage turn-off, effectively suppressing dv/dt crosstalk and enhancing noise immunity
- Threshold Voltage: 2~4V, flexible drive design, compatible with common SiC drivers
- On-Resistance: 40mΩ (at 18V drive), maintaining extremely low losses even at high voltages
- Maximum Current: 60A, a single device can handle high-power applications
- Package: TO247, excellent thermal performance, suitable for industrial-grade high-reliability design
- Technology: SiC-S, silicon carbide solution, fast switching speed, no reverse recovery issues
Domain and module applications：
- Photovoltaic Inverters – As the main switching transistor in Boost or inverter bridges, significantly improving conversion efficiency and reducing heatsink costs.
- Electric Vehicle On-Board Chargers (OBC) – In high-voltage DC-DC and PFC stages, leveraging SiC's low losses to increase switching frequency and reduce magnetic component size.
- Energy Storage Converters (PCS) – In bidirectional energy conversion scenarios, the 60A high current and low on-resistance handle high-power charging and discharging with ease.
- Server Power Supplies / High-Voltage DC-DC Modules – Using SiC MOS to replace traditional silicon devices, helping achieve Titanium-level efficiency.
- Industrial Motor Drives – The 1200V withstand voltage and robust TO247 package are suitable for three-phase 380V/480V input, increasing system power density.
- Uninterruptible Power Supplies (UPS) – Using this device in the inverter stage of online UPS systems can reduce losses, optimize thermal design, and extend product lifespan.
- Traction Converters / Rail Transit Auxiliary Power Supplies – Resistant to high voltage and surges, maintaining stable output in harsh environments.
In a nutshell: The IMW120R040M1HXKSA1-VB is more than just a silicon carbide MOS transistor; it is the 'efficiency engine' and 'cornerstone of reliability' for your high-voltage, high-power power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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