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C2M0040120D-VB Product details
Back to previous pageProduct introduction：
The VBsemi C2M0040120D-VB is a Single N-channel Silicon Carbide (SiC) power field-effect transistor, part of the VBsemi brand product series. This product is manufactured based on advanced SiC-S technology, featuring a drain-source voltage (VDS) of 1200V, reliable operation at a gate-source voltage (VGS) of -10V, a maximum drain current of 60A, and an on-resistance of 40mΩ (at VGS=18V). It comes in a TO247 package, offering excellent thermal performance and reliability, suitable for high-voltage, high-frequency, high-efficiency power conversion circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Drain-Source Voltage (VDS): 1200V
- Gate-Source Voltage (VGS): -10V
- Threshold Voltage (Vth): 2~4V
- On-Resistance (VGS=18V): 40mΩ
- Maximum Drain Current (ID): 60A
- Technology: SiC-S
- Package: TO247
Domain and module applications：
1. Photovoltaic Inverters: The C2M0040120D-VB is suitable for power switching circuits in grid-tied photovoltaic inverters. Its high voltage and low on-resistance characteristics help reduce losses and improve system conversion efficiency.
2. Electric Vehicle Charging Systems: In on-board chargers (OBC) and DC fast charging stations, this device can serve as a switching transistor for high-frequency rectification or DC-DC conversion, meeting the needs for high power and high reliability.
3. Industrial Power Supplies & UPS: Used in Power Factor Correction (PFC) and inverter stages of industrial switching power supplies and Uninterruptible Power Supplies (UPS), it can improve power density and stability.
4. High-Voltage DC-DC Converters: In high-voltage DC-DC converters, this MOSFET is suitable for synchronous rectification and switching circuits, enabling efficient power conversion and adapting to wide input voltage ranges.
5. Motor Drives & Traction Systems: Suitable for industrial motor drives, electric vehicle traction inverters, etc., providing high-voltage and high-current drive capability to ensure smooth system operation.
6. Wind Power Generation Systems: In wind power converters, this device can be used in rectification, inversion, and braking units, capable of handling high voltages and harsh operating environments, improving system reliability.
7. Smart Grids & Power Electronics Equipment: Suitable for power electronic equipment such as solid-state transformers and reactive power compensation devices, helping to achieve grid intelligence and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
