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UJ3C120040K3S-VB Product details
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The VBsemi UJ3C120040K3S-VB is a Single N-channel Silicon Carbide (SiC) power field-effect transistor, belonging to VBsemi's high-performance product series. This product is manufactured using advanced SiC-S process technology, featuring extremely low on-resistance, high withstand voltage, and excellent thermal stability, making it suitable for high-efficiency, high-power-density power conversion systems. The device is packaged in TO247, suitable for industrial-grade power modules and applications in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Drain-Source Voltage (VDS): 1200V
- Gate-Source Voltage (VGS): -10V (allows negative voltage turn-off)
- Threshold Voltage (Vth): 2~4V
- On-Resistance (VGS=18V): 40 mΩ
- Maximum Drain Current (ID): 60A
- Technology Type: SiC-S (Silicon Carbide MOSFET)
Domain and module applications：
1. New Energy Vehicle Charging Stations: The UJ3C120040K3S-VB is suitable for power conversion modules in DC fast charging stations. With its 1200V high-voltage capability and 40mΩ low on-resistance, it can significantly improve charging efficiency and reduce system losses.
2. Photovoltaic Inverters: In photovoltaic power generation systems, this device can be used in DC-DC boost and DC-AC inverter stages, supporting higher bus voltages and improving overall system energy efficiency and reliability.
3. Industrial Motor Drives: Suitable for high-voltage industrial motor drivers as an inverter switching element, enabling precise motor control with excellent surge and overload capability.
4. Energy Storage Systems (ESS): In energy storage converters, this model can be used in bidirectional DC-DC converters and grid-tied inverters, ensuring efficient bidirectional energy flow and long-term stable operation.
5. Uninterruptible Power Supplies (UPS): Used in the rectifier and inverter circuits of online UPS systems, it can increase power density, reduce cooling requirements, and meet power supply assurance needs for critical loads.
6. High-Frequency Switching Power Supplies: Leveraging the high-speed switching characteristics and low switching losses of silicon carbide material, this device is suitable for high-frequency topologies like LLC and phase-shifted full-bridge, effectively reducing magnetic component size.
7. High-Voltage Auxiliary Power Supplies & Rail Transit: In locomotive auxiliary converters and high-speed rail auxiliary power systems, this product provides a high-voltage, high-reliability power switching solution, adapting to vibration and wide temperature range operating environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
