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C3M0040120D-VB Product details
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The C3M0040120D-VB is a SiC power MOSFET deeply optimized for high-voltage, high-efficiency power switching applications. It utilizes SiC-S technology to achieve extremely low switching losses and excellent high-temperature reliability. The TO247 package provides ample thermal path and mounting strength for high-power-density designs. The combination of 1200V withstand voltage, 60A current capability, and 40mΩ on-resistance makes it a preferred alternative to traditional silicon-based IGBTs or super-junction MOSFETs, particularly suitable for demanding applications like photovoltaic inverters and on-board chargers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
VDS=1200V: Adapts to 400V/800V high-voltage bus systems, providing ample margin for voltage spikes, significantly reducing avalanche breakdown risk.
VGS=-10V: Supports negative voltage turn-off, enhancing dv/dt immunity, effectively preventing false turn-on under high-voltage, high-frequency conditions.
Vth=2~4V: Well-distributed threshold voltage, enabling fast and reliable switching with standard SiC gate drives (e.g., +18V/-5V).
RDS(on)=40mΩ @ VGS=18V: Ultra-low on-resistance, drastically reducing full-load conduction losses, allowing for smaller heatsinks and improved system efficiency.
ID=60A: Ample continuous current margin, capable of handling steady-state and transient peak demands of high-power motors, power modules, etc.
Package TO247: Long creepage distance, low thermal resistance, suitable for high-voltage, high-current scenarios, compatible with mainstream PCB layout and heatsink assembly processes.
Domain and module applications：
Photovoltaic Inverters: The high-frequency, low-loss characteristics of SiC material significantly improve MPPT boost and H-bridge inverter efficiency, resulting in higher overall power density.
On-Board Chargers (OBC) & DC-DC Converters: 1200V withstand voltage covers 800V battery architectures, maintaining high efficiency in both soft-switching and hard-switching topologies, contributing to vehicle lightweighting.
UPS Uninterruptible Power Supplies: Low switching losses allow for increased switching frequency, reducing magnetic component size, while enhancing overload and short-circuit withstand capability.
Industrial Motor Drives: Direct high-voltage bus drive simplifies inverter topology, low on-resistance reduces steady-state heat generation, improving long-term system reliability.
Energy Storage Converters (PCS): Low power stage losses in bidirectional energy conversion, combined with negative voltage turn-off, ensure stable operation in high-noise environments.
High-Frequency Switching Power Supplies: SiC-S technology significantly reduces reverse recovery losses, suitable for topologies like LLC and phase-shifted full-bridge, enabling compact, high-efficiency designs.
Power Electronic Transformers & Solid-State Circuit Breakers: High-speed switching capability and voltage rating match the requirements of next-generation grid equipment, improving system response speed.
Selection Summary: The C3M0040120D-VB achieves a balance between high-voltage withstand capability, low-frequency/high-frequency losses, and system reliability. It is an ideal choice for 1200V power stage applications, especially for industrial and new energy projects with strict requirements for efficiency, power density, and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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