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NTHL040N120SC1-VB Product details
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Are you struggling with high switching losses and insufficient voltage withstand capability in high-voltage, high-power applications? The VBsemi NTHL040N120SC1-VB is here to break the deadlock! This TO247-packaged Silicon Carbide (SiC) N-MOSFET, manufactured with advanced SiC-S technology, boasts a breakdown voltage of 1200V, a continuous drain current of 60A, and an ultra-low on-resistance of only 40mΩ (at 18V drive). It can withstand high-voltage surges while minimizing conduction losses. Its extremely low gate charge and excellent switching characteristics make it excel in high-frequency applications, making it the 'efficiency heart' for high-voltage systems like photovoltaics, energy storage, and charging stations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Voltage Rating: 1200V (ample margin for high-voltage systems)
- Drive Conditions: 18V recommended drive (RDS(ON) as low as 40mΩ), allows -10V negative turn-off
- Threshold Voltage: 2~4V (narrow threshold window for good switching consistency)
- Ultra-Low On-Resistance: 40mΩ @ 18V (conduction losses far lower than traditional silicon devices)
- High Current Capability: 60A (handles high-power output with ease)
- Package: TO247 (excellent heat dissipation, suitable for industrial-grade high-power design)
- Technology: SiC-S Silicon Carbide process (high temperature, high frequency, high efficiency)
Domain and module applications：
– Six High-Voltage Scenarios, One Solution
- Photovoltaic Inverters: MPPT boost and inverter stages, significantly improving system efficiency
- Energy Storage Converters: Bidirectional converters, high-voltage side rectification/inversion, lower switching losses
- Electric Vehicle Charging Stations: High-power DC-DC modules, increasing charging power density
- On-Board Chargers (OBC) & DC-DC: Adapts to 800V platforms, supporting vehicle high-voltage architecture
- Industrial Motor Drives: High-voltage variable frequency drives, high switching speed, better EMI suppression
- Uninterruptible Power Supplies (UPS): High-efficiency online applications, saving data center cooling costs
NTHL040N120SC1-VB – Empowered by Silicon Carbide, making high-voltage power supply design more effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
