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VBP165C30-4L Product details
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You are designing a high-power-density power supply that needs to handle a 650V high-voltage bus while minimizing both switching and conduction losses. Traditional silicon-based MOSFETs are struggling under high temperatures and high frequencies, but the VBsemi VBP165C30-4L leverages SiC material advantages to integrate 650V withstand voltage, 30A current capability, and a low on-resistance of 70mΩ into a TO247-4L package, making efficient and reliable power conversion a reality.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 650V | 2~5 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 650V | 2~5 | 30A | 70(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 650V | 2~5 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- Withstand Voltage: 650V, easily covering three-phase industrial and automotive high-voltage applications
- Gate Drive Range: -10V (negative voltage turn-off recommended for improved noise immunity), compatible with standard SiC drive solutions
- Threshold Voltage: 2~5V, providing good immunity to false turn-on
- On-Resistance: 70mΩ (at VGS=18V), significantly reducing conduction losses
- Maximum Current: 30A, combined with SiC's low switching losses for enhanced performance
- Technology: SiC, enabling high junction temperature operation and low reverse recovery charge, facilitating high-frequency, high-efficiency design
Domain and module applications：
- Photovoltaic Inverters / Energy Storage Converters – As the main switch in boost or inverter stages, improving system efficiency and reducing heatsink size.
- On-Board Chargers (OBC) / DC-DC Converters – Efficiently converting power between high-voltage buses, ensuring reliable operation over a wide temperature range.
- Industrial Power Supplies / Charging Stations – Leveraging SiC advantages in high-frequency hard-switching or LLC topologies to reduce switching losses and electromagnetic interference.
- Motor Drives / Servo Drives – The 650V withstand voltage and 30A current capability handle turn-off spikes from inductive loads with ease.
- High-Power PFC / Active Rectifiers – Low reverse recovery characteristics lead to lower diode losses, improving power factor and harmonics.
- High-Frequency Wireless Charging / Induction Heating – Fast switching capability allows you to break through the size limitations of magnetic components, significantly increasing power density.
In a nutshell: The VBP165C30-4L is more than just a SiC MOSFET; it is the 'key step' for your high-voltage, high-power designs towards high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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