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VBP165C40B Product details
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Still struggling with high switching losses and difficult thermal design in high-voltage, high-power systems? Let VBsemi VBP165C40B help! This TO247 packaged Silicon Carbide (SiC) N-MOSFET can withstand 650V high voltage and 40A high current, with a typical on-resistance of only 50mΩ, significantly reducing conduction losses. SiC material inherently possesses high critical electric field strength and high thermal conductivity, supporting high-frequency switching operation and noticeably reducing magnetic component size. The negative voltage turn-off capability makes gate drive more reliable. It is the "hardcore choice" for efficient power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 2~5 | 40A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 2~5 | 40A | 50(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 2~5 | 40A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Voltage Rating: 650V (ample margin for handling high-voltage spikes with confidence)
- Drive Capability: -10V negative voltage turn-off (strong noise immunity, recommended turn-on voltage 18V)
- Threshold Voltage: 2~5V (standard voltage window, easy for drive design)
- Ultra-Low On-Resistance: 50mΩ @ 18V (extremely low loss in its class)
- High Current Capability: 40A (single device handles high power)
- Package: TO247 (suitable for power modules and dense thermal layouts)
- Technology: SiC Silicon Carbide (high-temperature resistance, low switching losses, high reliability)
Domain and module applications：
– Seven Hot Scenarios, One Chip Solves All
- Photovoltaic Inverters: Efficient boost and inversion, increasing system energy yield.
- On-Board Chargers (OBC): High-frequency switching aids module miniaturization.
- Electric Vehicle DC-DC Converters: Flexible conversion from high-voltage bus, easier thermal management.
- Energy Storage Converters (PCS): High-efficiency bidirectional conversion, supporting grid stability.
- Industrial Power Supplies: High-voltage power conversion, low temperature rise, long lifespan.
- UPS Uninterruptible Power Supplies: Fast response, protecting critical load power supply.
- Motor Drives: High-voltage motor control, smooth driving with significant energy savings.
VBP165C40B – SiC empowers, making high-voltage power design more efficient and reliable!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
