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NVH4L075N065SC1-VB Product details
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You are designing a high-efficiency, high-power-density industrial power supply or on-board charger, facing a 650V high-voltage bus, but needing to balance switching losses and conduction losses. Traditional silicon-based MOSFETs are reaching their limits, and VBsemi NVH4L075N065SC1-VB provides the answer. It employs advanced SiC (Silicon Carbide) technology, integrating 650V withstand voltage, 40A current capability, and 50mΩ on-resistance (@VGS=18V) into a TO247-4L package, making high-voltage, high-power conversion more efficient, reliable, and compact.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 650V | 2~5 | 40A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 650V | 2~5 | 40A | 50(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 650V | 2~5 | 40A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- Voltage Rating: 650V, covering mainstream high-voltage application scenarios
- Gate Drive Voltage: -10V (negative voltage turn-off capability), enhancing noise immunity
- Threshold Voltage: 2~5V, flexible drive design
- On-Resistance: 50mΩ (@VGS=18V), significantly reducing conduction losses
- Maximum Drain Current: 40A, handles high current output with ease
- Technology Type: SiC, extremely low switching losses and high-temperature stability
Domain and module applications：
- New Energy Vehicle On-Board Chargers (OBC) – As the main switch for PFC or DC-DC stages, leveraging SiC's low reverse recovery and high-speed switching characteristics to improve overall efficiency.
- Photovoltaic Inverters / Energy Storage Systems – Reduces switching losses in MPPT boost and inverter bridges, contributing to higher power density.
- Industrial Switching Power Supplies / Server Power Supplies – Replaces traditional silicon-based MOSFETs or IGBTs, reducing thermal stress and extending equipment lifespan.
- Uninterruptible Power Supplies (UPS) – Enables fast switching in rectifier/inverter stages, improving dynamic response and overload capability.
- Motor Drives / Servo Systems – Leverages SiC's high-temperature operation capability and low on-resistance for stable driving of high-power motors.
- High-Voltage DC-DC Converters – Utilizes low-loss advantages in synchronous rectification or active clamp topologies to improve conversion efficiency.
In a nutshell: The NVH4L075N065SC1-VB is not just a high-performance SiC MOSFET; it is the "key engine" for your high-voltage, high-power system's journey towards efficiency and miniaturization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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