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NVH4L095N065SC1-VB Product details
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Still troubled by high heat generation and switching losses in high-voltage, high-power systems? Let VBsemi NVH4L095N065SC1-VB break the deadlock! This TO247-4L packaged SiC N-MOSFET, based on advanced silicon carbide technology, features a 650V voltage rating and 30A continuous current capability, with an ultra-low on-resistance of 70mΩ (@18V drive), significantly reducing conduction losses. SiC material offers extremely low switching losses and excellent high-temperature stability. Combined with the four-pin Kelvin source package, which decouples the drive loop from the power loop, it enables faster switching speeds and less ringing. It is the "core choice" for efficient, high-power-density power supply designs and industrial applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 650V | 2~5 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 650V | 2~5 | 30A | 70(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 650V | 2~5 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- Voltage Rating: 650V (handles high-voltage applications with ease)
- Drive Voltage: VGS=-10V (recommended gate drive design reference)
- Threshold Voltage: Vth=2~5V (compatible with standard power drive)
- On-Resistance: 70mΩ @ VGS=18V (low conduction loss, improves efficiency)
- Continuous Drain Current: 30A (high current delivery capability)
- Technology Platform: SiC Silicon Carbide (advantages in high-frequency, high-temperature, high-voltage scenarios)
- Package Type: TO247-4L (Kelvin source, low drive interference, better switching performance)
Domain and module applications：
– Six High-Voltage Scenarios, One Chip Solves All
- Photovoltaic Inverters: Helps improve efficiency and reduce voltage stress in string inverters, enhancing MPPT tracking reliability.
- On-Board Chargers (OBC): High-frequency switching reduces transformer size, improving charging efficiency.
- Energy Storage Converters (PCS): Lower losses in bidirectional power conversion, smaller system temperature rise.
- Industrial Switching Power Supplies: Suitable for LLC / Full-bridge topologies, enabling high-efficiency, high-density designs.
- Motor Drives: Smooth high-voltage variable frequency drive, strong surge immunity, stable and reliable.
- Uninterruptible Power Supplies (UPS): High conversion efficiency in the inverter stage of online UPS, reduced thermal stress.
NVH4L095N065SC1-VB – SiC empowers, making high-voltage, high-current applications more efficient and manageable!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
