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IMZA65R072M1H-VB Product details
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**The VBsemi IMZA65R072M1H-VB is a Single N-Channel power MOSFET based on SiC (Silicon Carbide) technology, designed for high-voltage, high-frequency, and high-efficiency power electronics applications. It features a TO247-4L package with an integrated Kelvin source pin, which effectively reduces gate drive loop inductance, improving switching speed and system stability. The device offers excellent voltage withstand capability within a 650V drain-source voltage range, combined with a low on-resistance of 70mΩ, significantly reducing conduction losses. Furthermore, the inherent wide bandgap characteristics of SiC material provide outstanding high-temperature operation capability and extremely low switching losses, making it suitable for industrial and automotive-grade applications with stringent efficiency and reliability requirements.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 650V | 2~5 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 650V | 2~5 | 30A | 70(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 650V | 2~5 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- Drain-Source Voltage (VDS): 650V
- Gate-Source Voltage (VGS): -10V
- Threshold Voltage (Vth): 2~5V
- On-Resistance (VGS=18V): 70mΩ (typical)
- Maximum Drain Current (ID): 30A
- Package Type: TO247-4L
- Technology: SiC (Silicon Carbide)
**
Domain and module applications：
1. **High-Efficiency Switching Power Supplies**: Used in PFC or LLC topologies for server power supplies, communication power supplies, and industrial power supplies, leveraging SiC's low reverse recovery charge and fast switching characteristics to improve overall efficiency.
2. **Photovoltaic Inverters**: Serves as the main switch in boost or inverter stages, achieving low-loss energy conversion under high-voltage DC bus, helping to increase the power generation yield of photovoltaic systems.
3. **Electric Vehicle Charging Stations**: Suitable for DC fast charging modules, capable of withstanding high-frequency and high-voltage operating conditions, reducing heat dissipation requirements, and improving the power density and reliability of charging stations.
4. **Energy Storage Converters (PCS)**: Used for bidirectional DC-AC conversion in energy storage systems, supporting efficient energy feedback and enhancing grid interaction capabilities.
5. **Industrial Motor Drives**: Drives high-voltage three-phase motors, enabling precise control with PWM speed regulation, reducing power losses in motor drives, suitable for industrial fans, pumps, and compressors.
6. **Uninterruptible Power Supplies (UPS)**: Acts as a rectifier or inverter switch in online UPS systems, ensuring high-quality power supply to critical loads and improving the overload capacity of the unit.
7. **High-Frequency DC-DC Converters**: Used in isolated or non-isolated topologies for high-voltage to low-voltage conversion, such as on-board DC-DC converters, leveraging SiC's high-frequency advantages to reduce the size of magnetic components.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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