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AIMW120R035M1H-VB Product details
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The AIMW120R035M1H-VB is a Single N-MOSFET deeply optimized for high-voltage, high-power switching applications. Based on SiC-S (Silicon Carbide) technology, it combines ultra-low switching losses with excellent high-temperature reliability. The TO247 package achieves an excellent balance between power density and heat dissipation capability. The combination of 1200V withstand voltage, 60A current carrying capacity, and 40mΩ on-resistance makes it an ideal core power device for high-voltage, high-power applications such as photovoltaic inverters, energy storage converters, and electric vehicle charging stations, particularly suitable for industrial-grade projects with stringent efficiency and reliability requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
VDS=1200V: Covers high-voltage systems like photovoltaic busbars and charging stations, providing ample voltage spike margin and significantly reducing the risk of avalanche failure.
VGS=-10V: Withstands negative gate voltage. Used with the recommended drive voltage, it ensures fast turn-off during switching transients, enhancing dv/dt immunity.
Vth=2~4V: A reasonable threshold voltage window balances immunity to false turn-on and driver compatibility, compatible with standard SiC gate drive solutions.
RDS(on)=40mΩ @ VGS=18V: Ultra-low on-resistance significantly reduces full-load conduction losses, improves overall system efficiency, and lowers heat dissipation requirements.
ID=60A: Ample continuous current capability can comfortably handle steady-state and transient current surges in high-voltage, high-power equipment.
Package TO247: Features large creepage distance and low thermal resistance, suitable for high-voltage, high-current scenarios, supporting compact power module design.
Domain and module applications：
Photovoltaic Inverters: Ultra-low conduction and switching losses improve MPPT efficiency. The 1200V withstand voltage safely adapts to 1000V DC bus systems.
Energy Storage Converters (PCS): Efficient bidirectional conversion reduces thermal losses, extends system lifespan, and reduces heatsink size.
Electric Vehicle Charging Stations: High-voltage, high-current capability meets the power requirements of fast charging modules. SiC technology increases switching frequency, reducing the size of magnetic components.
Industrial Motor Drives: Low losses and high reliability adapt to 690V industrial grids, improving inverter temperature rise and overload capability.
High-Frequency DC-DC Converters: Low parasitic capacitance of SiC material supports high-frequency operation, achieving significantly higher power density than comparable Si devices.
Uninterruptible Power Supplies (UPS): High voltage withstand capability and low conduction losses improve overall unit efficiency, meeting the high-reliability power supply needs of data centers.
On-Board Chargers (OBC): 1200V withstand voltage combined with 60A current capability is suitable for 800V high-voltage platforms, reducing system cost and losses.
Selection Summary: The AIMW120R035M1H-VB achieves an excellent balance between withstand voltage, on-resistance, current capability, and package reliability. It is a high-performance silicon carbide solution for 1200V high-voltage switching applications, particularly suitable for projects with strict requirements for efficiency, power density, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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