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AIMW120R045M1-VB Product details
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Struggling with high switching losses and difficult thermal design in high-voltage, high-power systems? Let the VBsemi AIMW120R045M1-VB solve your problems! This TO247 packaged SiC N-MOSFET, using advanced SiC-S Silicon Carbide technology, has a rated withstand voltage of up to 1200V, can handle 60A continuous current, and features an ultra-low on-resistance of 40mΩ (@18V). Compared to traditional silicon-based devices, the Silicon Carbide material brings lower switching losses, higher operating frequencies, and superior high-temperature reliability, enabling a qualitative leap in the efficiency of high-voltage power conversion. It is the 'efficiency champion' for fields like photovoltaic inverters and energy storage charging.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
Voltage Rating: 1200V (Ample margin for high-voltage applications, safe and reliable)
Drive Voltage: -10V~18V (18V recommended for turn-on, supports reliable negative voltage turn-off)
Turn-on Threshold: 2~4V (Clear threshold window, strong noise immunity)
Ultra-Low Resistance: 40mΩ @ VGS=18V (Significantly reduced conduction losses)
High Current Capability: 60A (Strong continuous output capability)
Package: TO247 (Excellent thermal performance, suitable for high-power assembly)
Technology: SiC-S (Silicon Carbide process, excellent high-frequency and high-temperature characteristics)
Domain and module applications：
– Six Popular Scenarios, One Solution
Photovoltaic Inverters: Efficient DC-AC conversion, increasing overall system power generation
Energy Storage Converters: High-power bidirectional power conversion, responsive and reliable
Electric Vehicle Charging Stations: High voltage, high current, higher charging efficiency
On-Board OBC / DC-DC: Meets automotive-grade heat dissipation and vibration resistance requirements
Motor Drives: High-voltage, high-power speed control, low losses, smooth operation
High-Voltage Switching Power Supplies: High-frequency design, aiding in the miniaturization of magnetic components
AIMW120R045M1-VB – High Voltage, High Current, Empowered by Silicon Carbide, Making Your Power Supply Design Easier!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
