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SCTWA60N120G2AG-VB Product details
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The SCTWA60N120G2AG-VB is a Single N-MOSFET deeply optimized for high-voltage, high-power switching applications. Based on SiC-S Silicon Carbide technology, it combines extremely low switching losses with excellent high-temperature reliability. The TO247 package offers excellent heat dissipation and overcurrent capability. The combination of 1200V withstand voltage, 60A current carrying capacity, and 40mΩ on-resistance makes it a preferred power device for high-voltage, high-density applications such as photovoltaic inverters, energy storage converters, electric vehicle on-board chargers, and industrial power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
VDS=1200V: Covers 400V~800V bus systems. The ample voltage margin effectively withstands voltage spikes, reducing the risk of avalanche failure.
VGS=-10V (Negative Voltage Turn-off): Allows reliable turn-off using negative gate voltage, enhancing dv/dt immunity and preventing false turn-on in high-voltage applications.
Vth=2~4V: Moderate threshold voltage, enabling fast and stable turn-on with standard SiC drivers, compatible with mainstream drive solutions.
RDS(on)=40mΩ @ VGS=18V: Ultra-low on-resistance significantly reduces full-load conduction losses. Combined with the TO247 package, it can significantly reduce heatsink size.
ID=60A: Ample continuous current capability can handle continuous full-load output and short-term overload requirements of high-voltage, high-power converters.
Package TO247: Low thermal resistance, large creepage distance, suitable for high-voltage, high-current applications. Supports screw mounting, beneficial for system thermal design and long-term reliability.
Technology SiC-S: Silicon Carbide material brings extremely low switching losses and high-temperature operating capability. Switching frequency can be significantly increased, aiding in the miniaturization of magnetic components.
Domain and module applications：
Photovoltaic Inverters: Low conduction losses and high withstand voltage improve DC-AC conversion efficiency, reduce system temperature rise, suitable for string and central inverter topologies.
Energy Storage Converters: Performs excellently in bidirectional power conversion, supports higher bus voltage, reduces the number of parallel modules, simplifying system design.
Electric Vehicle On-Board Chargers (OBC): 1200V withstand voltage covers 800V battery platforms. SiC technology reduces charging losses and increases power density.
DC-DC Converters: Replaces traditional silicon devices in high-voltage bus conversion. Switching losses are reduced by over 50%, facilitating the miniaturization and high-frequency operation of magnetic components.
Industrial Motor Drives: High withstand voltage, fast switching speed, combined with negative voltage turn-off to enhance noise immunity, suitable for high-voltage VFDs and servo drives.
Uninterruptible Power Supplies (UPS): Improves overall unit efficiency in high-voltage bus systems, reduces thermal stress, and extends equipment lifespan.
Charging Station Power Modules: High withstand voltage and low on-resistance support higher output voltage, reducing the number of parallel devices and lowering system cost.
Selection Summary: The SCTWA60N120G2AG-VB achieves an excellent balance between voltage rating, conduction losses, switching speed, and heat dissipation capability. It is a flagship silicon carbide choice for 1200V high-voltage, high-power applications, particularly suitable for projects with extreme requirements for efficiency, power density, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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