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NVHL075N065SC1-VB Product details
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The VBsemi NVHL075N065SC1-VB is a Single N-Channel Silicon Carbide (SiC) Field Effect Transistor, part of VBsemi's high-performance power device series. Manufactured using advanced SiC technology, this product features high breakdown voltage, low on-resistance, and excellent switching characteristics, suitable for power electronics applications requiring high frequency, high temperature, and high efficiency. The device is housed in a TO247 package, offering good thermal performance and reliable electrical isolation, suitable for power system designs with high power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 2~5 | 40A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 2~5 | 40A | 50(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 2~5 | 40A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Drain-Source Voltage (VDS): 650V
- Gate-Source Voltage (VGS): -10V (Allows negative voltage turn-off, enhancing noise immunity)
- Threshold Voltage (Vth): 2~5V
- On-Resistance (VGS=18V): 50 mΩ
- Maximum Drain Current (ID): 40A
- Package Type: TO247
- Technology Type: SiC
Domain and module applications：
1. Photovoltaic Inverters: The NVHL075N065SC1-VB is suitable for DC-AC conversion circuits in grid-tied photovoltaic inverters. Utilizing the high withstand voltage and low loss characteristics of SiC devices, it improves system conversion efficiency and power density.
2. Electric Vehicle Charging Stations: In on-board chargers (OBC) and DC fast charging stations, this device can be used in PFC stages and DC-DC power conversion stages, supporting high-frequency operation, reducing magnetic component size, and improving charging system reliability.
3. Industrial Power Modules: Suitable for Power Factor Correction (PFC) and full-bridge LLC topologies in high-efficiency switching power supplies like server power supplies and communication power supplies, reducing conduction and switching losses to meet stringent energy efficiency standards.
4. Uninterruptible Power Supplies (UPS): In the rectifier and inverter stages of UPS systems, SiC MOSFETs can improve overload capability and dynamic response speed, ensuring power supply continuity for critical loads.
5. Motor Drive Systems: Used in the power stage of industrial motor drives, elevator traction, and compressor controllers. The 650V withstand voltage and 40A current capability cover medium-power drive requirements, and the low on-resistance reduces heat generation.
6. Energy Storage Systems (ESS): Acts as the main switching device in energy storage converters, enabling bidirectional charge/discharge energy management, improving system cycle efficiency and long-term operational stability.
7. High-Frequency DC-DC Converters: Leveraging the low gate charge and fast reverse recovery characteristics of SiC MOSFETs, it is suitable for high-frequency synchronous rectification and active clamp circuits, enabling miniaturization and high efficiency of power modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
