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TW083N65C-VB Product details
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You are designing a high-power photovoltaic inverter or a 30A-class energy storage converter. The 650V high-voltage bus is already challenging, but you also face severe heating and high switching losses. Ordinary silicon-based MOS transistors struggle under high temperature and high frequency. The VBsemi TW083N65C-VB utilizes Silicon Carbide (SiC) technology, packaging 650V withstand voltage, 30A current carrying capability, and an on-resistance of only 70mΩ into a TO247 package, enabling high efficiency, low temperature rise, and high reliability in high-voltage, high-power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 2~5 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 2~5 | 30A | 70(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 2~5 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Voltage Rating 650V, easily covers three-phase grid and high-voltage DC bus
- Gate-Source Negative Voltage Rating -10V, compatible with mainstream SiC drive solutions
- Threshold Voltage 2~5V, stable turn-on, reliable turn-off
- On-Resistance 70mΩ (at VGS=18V), maintains extremely low loss even under high current
- Maximum Drain Current 30A, a single device can handle high power output
- Utilizes SiC Technology, excellent performance under high temperature, high frequency, and high voltage
- Package TO247, industrial-grade thermal impedance and mechanical strength
Domain and module applications：
- Photovoltaic Inverters / Energy Storage Converters – Serves as the main switch, leveraging SiC's low switching losses to improve MPPT efficiency and overall power density.
- Electric Vehicle DC Fast Charging Stations – Operates efficiently in AC-DC and DC-DC power stages, reducing thermal stress and improving charging system reliability.
- High-Power Switching Power Supplies / Server Power Supplies – Replaces traditional silicon devices, reduces switching losses at 650V bus voltage, improving full-load efficiency.
- Uninterruptible Power Supplies (UPS) – Fast switching and low conduction voltage drop make the inverter stage more robust, adapting to demanding power quality requirements.
- Motor Drives / Industrial Variable Frequency Drives – Withstands high-temperature shocks, providing persistent and stable output for high-reliability industrial equipment.
- On-Board DC-DC Converters – Efficiently completes high-voltage to low-voltage power conversion, helping to shrink power supply size and reduce energy consumption.
One-sentence summary: The TW083N65C-VB is not just an ordinary MOS transistor; it is the 'Efficiency Engine' and 'Thermal Savior' for your high-voltage, high-power power supply.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
