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IMW65R072M1H-VB Product details

Product introduction:

The IMW65R072M1H-VB is a Single N-MOSFET based on SiC technology, packaged in TO247, targeting high-voltage, high-power switching applications. The combination of 650V withstand voltage, 30A current carrying capacity, and 70mΩ on-resistance (@VGS=18V) fully leverages the advantages of SiC materials in high-temperature, high-frequency, and low-loss scenarios, significantly improving system efficiency and power density. This device is suitable for industrial applications with stringent reliability and thermal performance requirements, such as photovoltaic inverters, energy storage converters, and new energy vehicle charging modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 2~5 30A SiC
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SiC
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 2~5 30A 70(mΩ) SiC
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 2~5 30A SiC
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N SIC

VDS=650V: Covers 400V/600V bus systems, provides ample voltage margin, and can withstand harsh grid surges and switching spikes.
VGS=-10V: Supports negative voltage turn-off, enhances dV/dt immunity, effectively preventing false turn-on under high voltage and high frequency.
Vth=2~5V: Reasonable threshold distribution, balancing drive compatibility and noise immunity, simplifying gate drive design.
RDS(on)=70mΩ @ VGS=18V: Low on-resistance reduces conduction losses; combined with SiC's low switching loss characteristics, it significantly improves heavy-load efficiency.
ID=30A: Ample continuous current capability, meeting medium-power module requirements; TO247 package provides an excellent thermal path.
Package TO247: Large pins and low thermal resistance package support long-duration high-power operation, suitable for industrial-grade products.

Domain and module applications:


Photovoltaic Inverters: High-frequency switching reduces inductor/transformer size, improves MPPT conversion efficiency, and lowers system cost.
Energy Storage Converters: Balances low conduction and switching losses in bidirectional DC-AC conversion, aiding high-power-density design.
New Energy Vehicle Charging Modules: Reduces switching losses in high-voltage fast-charging platforms, improving overall charging efficiency and reliability.
Industrial Switching Power Supplies: Stable operation over a wide temperature range, adapts to harsh grid environments, optimizes full-load thermal performance.
Motor Drives: Reduces switching ringing in high-voltage motor controllers, enhancing system anti-interference capability.
UPS Uninterruptible Power Supplies: Improves AC/DC and DC/AC conversion efficiency, reduces thermal stress, and extends equipment life.
High-Frequency Induction Heating and Welding: Leverages SiC's high-frequency low-loss advantage, supports higher power output, and reduces magnetic component cost.

Selection Summary: The IMW65R072M1H-VB, leveraging SiC technology, achieves a combination of high withstand voltage, low on-resistance, and high-frequency switching capability. It is a high-performance general-purpose choice for 650V-class high-voltage power conversion, particularly suitable for industrial and new energy applications with strict requirements for efficiency, temperature rise, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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