VBK5819 Product details
Product introduction:
The VBK5819 is a Schottky diode specifically designed for low-voltage, high-frequency rectification and reverse-connection protection applications. It features a compact SOD-323 package, achieving an excellent balance between a 40 V withstand voltage, extremely low forward voltage drop, and fast switching characteristics. With an ultra-low forward voltage drop of 640 mV at 1 A and a reverse recovery time of <50 ns, this diode represents an ideal upgrade solution over traditional 1 A rectifier devices (e.g., the 1N5819), offering significant advantages particularly in space-constrained portable devices, power adapters, and communication modules. It is important to note that the device's 1 A rated current refers to the peak pulse current; the continuous operating current should be derated based on the 200 mW power dissipation limit (recommended: <200 mA). This characteristic ensures outstanding performance in low-current, high-efficiency applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOD-323 | Schottky |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOD-323 | Schottky | 640mV @ 1A (pulse) | 1A(pulse) / <200mA(cont.) | 100μA @ 40V | 50pF @ 1MHz |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOD-323 | Schottky |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOD-323 | Schottky |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOD-323 | Schottky | VR = 40V | 200mW | 640mV @ 1A (pulse) | 1A(pulse) / <200mA(cont.) | 100μA @ 40V | 50pF @ 1MHz | Diode |
VR = 40V – Provides ample reverse voltage rating, enabling safe application to 5V,12V, or even 24V DC busbars; offers sufficient voltage margin to effectively mitigate inductive load turn-off spikes and enhance system reliability.
VF = 640 mV @ IF = 1 A (pulse): Extremely low forward voltage drop, significantly reducing conduction losses. At the same current level, it offers nearly 36% energy savings compared to conventional PN junction diodes (approximately 1 V), making it particularly suitable for battery-powered applications and high-efficiency power conversion scenarios.
IF = 1 A (Pulse) / <200 mA (Continuous): Clearly distinguishes between pulse and continuous current handling capabilities. A peak current of 1 A is sufficient to withstand surge or transient overload conditions; however, the actual continuous current load should be limited to a maximum dissipation power of 200 mW (calculated as approximately 312 mA; it is recommended to maintain a safety margin <200 mA) to ensure the device operates reliably over the long term within the allowable temperature rise range.
IR = 100 μA @ VR = 40 V: The reverse leakage current is on the order of 100 μA at the rated withstand voltage, which has a limited impact on most low-frequency rectification circuits. However, it should be noted that the Schottky diode's leakage current increases exponentially with rising temperature; therefore, it is advisable to apply an appropriate derating factor in applications involving high ambient temperatures (>85 °C) or high reverse voltages (e.g., above 24 V) to prevent thermal runaway.
Pd = 200 mW: The maximum power consumption limit for the SOD-323 micro-packaging; during design, ensure that the actual conduction loss (IF_cont × VF) does not exceed this value, and enhance the actual heat dissipation capability by utilizing the PCB copper layer for thermal management.
Cd = 50 pF @ 1 MHz: The moderate junction capacitance, combined with a reverse recovery time of <50 ns, makes it suitable for switching frequencies in the hundreds of kHz range (e.g., 200–500 kHz DC-DC converters); however, it is not recommended for high-frequency resonance applications or high-speed signal clamping at MHz frequencies.
trr <50 ns: The reverse recovery time is superior to that of conventional fast-recovery diodes, effectively reducing switching losses and improving power conversion efficiency. This parameter indicates the integration of an internal protection ring structure, balancing speed and reliability.
SOD-323 Package: A compact two-pin surface-mount package measuring only approximately 2.5 mm × 1.25 mm, ideal for high-density PCBA designs; its low parasitic parameters also facilitate high-frequency board layout.
Domain and module applications:
Low-Voltage Differential Reverse Connection Protection: Connected in series within the power input circuit, this protection utilizes its extremely low VF value to minimize voltage drop losses; it is particularly suitable for 3.3V/5V portable devices, extending battery life, while also providing reverse-blocking functionality to prevent damage to downstream components caused by incorrect polarity connections.
Low-power DC-DC converter with output rectification: Replaces traditional rectifier diodes in buck or boost topologies, improving conversion efficiency by 1–3%; particularly suitable for auxiliary or standby power supplies with an output current <200 mA, resulting in a significant reduction in module temperature rise.
Flyback diode: Connected in parallel across the terminals of a relay, solenoid valve, or motor coil to rapidly absorb the reverse induced electromotive force and protect the driving transistor or MOSFET. Its 40 V withstand voltage and fast recovery characteristics ensure clean and precise switching operations.
Signal detection and peak detection: The low VF and small junction capacitance make this circuit suitable for rectifying high-frequency signals (e.g., RF detection); however, in high-frequency applications (>10 MHz), the impact of the 50 pF capacitor on the signal waveform should be evaluated.
Battery charging management: Used as a reverse-charge protection diode in the charging circuit; its low voltage drop reduces additional power consumption and improves charging efficiency, making it ideal for low-power systems such as power banks and TWS earbud charging cases.
LED lighting auxiliary power supply: Provides a low-voltage auxiliary power source for the constant-current drive IC; its compact package facilitates integration into compact lamp board spaces, reducing the overall BOM footprint.
Vehicle Auxiliary Module: In a 12V vehicle system, the 40V withstand voltage provides sufficient margin against peak load pulses; its wide operating temperature range (please refer to the specific temperature rating) is suitable for the vehicle cabin environment; it is suitable for powering low-current sensors or protection circuits.
The VBK5819 delivers a premium combination of 40V withstand voltage, ultra-low forward voltage drop (VF), and fast recovery time through its SOD-323 compact package; its core value lies in its high efficiency and high density when operating under low-current (<200 mA) conditions. For applications requiring continuous 1A current, consider high-power Schottky diodes in SMA or SMB packages; for applications involving low-voltage auxiliary power supplies, reverse-connection protection, or current sustaining in portable devices, consumer electronics, or industrial control systems, this device offers an optimal balance between performance, size, and cost. When designing, ensure compliance with the continuous current derating principle and pay close attention to PCB thermal management to fully leverage its outstanding characteristics, delivering significant energy efficiency and space-saving benefits for your product.
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