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VBMB16R09S Product details
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You are designing a high-power-density switching power supply that needs to withstand 650V high voltage while also handling a high current output of 9A. Ordinary high-voltage MOSFETs often suffer from high conduction losses and high thermal dissipation. The VBsemi VBMB16R09S is designed for this purpose—it leverages the SJ_Multi-EPI superjunction technology to integrate 650V withstand voltage, 9A current-carrying capability, and a typical on-resistance of 550mΩ in a TO220F fully insulated package, allowing high-voltage power supply designs to find an ideal balance between reliability, heat dissipation, and cost.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | 550(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- Voltage Rating 650V, suitable for industrial and consumer high-voltage applications
- Gate Drive Range ±30V, compatible with common PWM controllers and driver ICs
- Threshold Voltage 3.5V, strong anti-interference, stable switching characteristics
- On-Resistance 550mΩ (at 10V drive), effectively reducing conduction losses
- Maximum Current 9A, paired with TO220F package for good heat dissipation path
- Super Junction Multi-Epitaxial Technology (SJ_Multi-EPI), optimizing the trade-off between on-resistance and switching performance
- Gate Drive Range ±30V, compatible with common PWM controllers and driver ICs
- Threshold Voltage 3.5V, strong anti-interference, stable switching characteristics
- On-Resistance 550mΩ (at 10V drive), effectively reducing conduction losses
- Maximum Current 9A, paired with TO220F package for good heat dissipation path
- Super Junction Multi-Epitaxial Technology (SJ_Multi-EPI), optimizing the trade-off between on-resistance and switching performance
Domain and module applications：
- **Switching Power Supplies / Adapters** – Used as the main high-voltage power stage switch, reducing losses and improving overall efficiency.
- **LED Lighting Drivers** – Leveraging high breakdown voltage and low on-resistance to reliably drive high-power LED arrays.
- **Industrial Auxiliary Power Supplies** – Adapting to wide input voltage environments to provide stable power for control circuits.
- **AC-DC Converter Modules** – Acting as switching devices in flyback or PFC topologies to enhance power density.
- **Photovoltaic Inverters / Microinverters** – Used in DC-DC boost stages or inverter bridges, withstanding high-voltage spikes.
- **Electric Vehicle Chargers** – Paired with high-efficiency control schemes to handle high-frequency switching and elevated operating temperatures.
- **Home Appliance Power Boards** – Providing reliable, long-life power switching solutions for appliances like air conditioners and refrigerators.
**One-Sentence Summary**: The VBMB16R09S is not just an ordinary MOSFET; it is the "reliable cornerstone" and "efficiency multiplier" for your high-voltage power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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